MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change
2.5Gbps
InGaAsP DFB LASER DIODE
TYPE
NAME
DESCRIPTION
ML925B40F / ML920J40S
ML925J40F / ML920L40S
APPLICATION
·
2.5Gbps long-haul transmission
·
Coarse WDM application
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4
shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0
o
C to 85
o
C without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
FEATURES
·
λ/4
shifted grating structure
·
Wide temperature range operation (0
o
C to 85
o
C)
·
High side-mode-suppression-ratio (typical 45dB)
·
High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
V
RL
I
FD
V
RD
Tc
Tstg
Parameter
Output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
Case temperature
Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
6
150
2
2
20
0 to +85
-40 to +100
Unit
mW
mA
V
mA
V
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Ith
Parameter
Threshold current
Test conditions
CW
CW
<*1>
Tc=85
ºC
<*2>
CW, Po=5mW
CW, Po=5mW
<*1>
Tc=85
ºC
<*2>
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW <*3>
CW, Po=5mW
CW, Po=5mW, Tc=0 to 85
ºC
2.48832Gbps,Ib=Ith, Ipp=40mA
CW, Po=5mW
CW, Po=5mW
2.48832Gbps,Ib=Ith, Ipp=40mA
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
CW, Po=5mW,VRD=1V,RL=10Ω
V
RD
=5V
V
RD
=5V
Min. Typ. Max.
Unit
---
10
15
mA
---
35
40
---
45
50
---
35
45
mA
---
70
80
---
90
100
---
1.1
1.5
V
0.17 0.22
---
mW/mA
0.15 0.20
---
<*4>,<*5>
nm
35
45
---
dB
---
45
---
---
25
---
deg.
---
---
---
0.1
---
---
30
11
80
---
---
10
---
---
120
1.0
0.1
20
deg.
GHz
ps
mA
µA
pF
Iop
Operation current
Vop
η
λp
SMSR
θ
//
θ
┴
fr
tr,tf
Operating voltage
Slope efficiency
Peak wavelength
Side mode suppression ratio
Side mode suppression ratio(RF)
Beam divergence angle (parallel) <*6>
(perpendicular) <*6>
Resonance frequency
Rise and Fall time <*7>
Monitoring output current (PD)
Im
Dark current (PD)
Id
Ct
Capacitance (PD)
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Feb. 2005
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change
<*4> Peak Wavelength
Type
ML925B40F-01 / ML920J40S-01
ML925J40F-01 / ML920L40S-01
ML925B40F-04 / ML920J40S-04
ML925J40F-04 / ML920L40S-04
ML925B40F-05 / ML920J40S-05
ML925J40F-05 / ML920L40S-05
ML925B40F-06 / ML920J40S-06
ML925J40F-06 / ML920L40S-06
ML925B40F-07 / ML920J40S-07
ML925J40F-07 / ML920L40S-07
ML925B40F-08 / ML920J40S-08
ML925J40F-08 / ML920L40S-08
ML925B40F-09 / ML920J40S-09
ML925J40F-09 / ML920L40S-09
ML925B40F-10 / ML920J40S-10
ML925J40F-10 / ML920L40S-10
ML925B40F-11 / ML920J40S-11
ML925J40F-11 / ML920L40S-11
Symbol
Test Condition
CW, Po=5mW
Tc= 0 to 85ºC
Min.
1530
1467
1487
1507
λp
CW, Po=5mW
Tc= 25ºC
1527
1547
1567
1587
1607
Limits
Typ.
1550
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1570
1473
1493
1513
1533
1553
1573
1593
1613
nm
Unit
2.5Gbps
InGaAsP DFB LASER DIODE
<*5> Peak Wavelength
Type
ML925B40F-12 / ML920J40S-12
ML925J40F-12 / ML920L40S-12
ML925B40F-13 / ML920J40S-13
ML925J40F-13 / ML920L40S-13
ML925B40F-14 / ML920J40S-14
ML925J40F-14 / ML920L40S-14
ML925B40F-15 / ML920J40S-15
ML925J40F-15 / ML920L40S-15
ML925B40F-16 / ML920J40S-16
ML925J40F-16 / ML920L40S-16
ML925B40F-17 / ML920J40S-17
ML925J40F-17 / ML920L40S-17
ML925B40F-18 / ML920J40S-18
ML925J40F-18 / ML920L40S-18
ML925B40F-19 / ML920J40S-19
ML925J40F-19 / ML920L40S-19
Symbol
Test Condition
Min.
1468
1488
1508
λp
CW, Po=5mW
Tc= 25ºC
1528
1548
1568
1588
1608
Limits
Typ.
1470
1490
1510
1530
1550
1570
1590
1610
Max.
1472
1492
1512
1532
nm
1552
1572
1592
1612
Unit
MITSUBISHI
ELECTRIC
Feb. 2005
MITSUBISHI LASER DIODES
ML9XX40 SERIES
Notice : Some parametric limits are subject to change
OUTLINE DRAWINGS
Dimensions : mm
2.5Gbps
InGaAsP DFB LASER DIODE
ML925B40F
ML920J40S
2-90°
φ5.6
-0.03
φ4.25
Ｙ
(0.25)
(3)
+0
(3)
LD
Case
(1)
(2)
PD
(1)
(4)
(2)
Ｘ
(0.25)
(4)
ML925B11F
ML925B40F
(3)
LD
1.27
±0.03
Emitting
Facet
1
±0.1
0.25
±0.03
φ3.55±0.1
(Glass)
φ2.0Min.
φ1.0Min.
Case
2.1
±0.15
(1)
PD
(2)
Reference
Plane
±0.1
1.2
(4)
18
±1
φ2.0
±0.25
(P.C.D.)
(1)
(2)
ML920J40S
ML920J11S
4-φ0.45
±0.05
Pin Connection
( Top view )
ML925J40F
ML920L40S
Top View
2-90°
Dimensions : mm
φ5.6
-0.03
φ4.3
Ｙ
(0.25)
(3)
+0
(3)
LD
Case
(1)
(2)
PD
(1)
(4)
(2)
Ｘ
(0.25)
(4)
ML925J11F
ML925J40F
(3)
1±0.1
φ3.75±0.1
Ｚ
Case
LD
3.97
±0.15
(7.51)
1.27
±0.03
Emitting
Facet
(1)
PD
(2)
Reference
Plane
±0.1
1.2
(4)
φ2.0
±0.25
(P.C.D.)
4-φ0.45
±0.05
(1)
(2)
18
±1
ML920L40S
ML920L11S
Pin
Connection
Pin
Connection
( Top
view)
)
(Top
view
MITSUBISHI
ELECTRIC
Feb. 2005
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