Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
5.0±0.2
Unit: mm
4.0±0.2
q
Complementary pair with 2SC1317 and 2SC1318.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SA719
2SA720
2SA719
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–5
–1
–500
625
150
–55 ~ +150
Unit
V
13.5±0.5
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
emitter voltage 2SA720
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
mA
mW
˚C
˚C
2.54±0.15
1 2 3
2.3±0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25˚C)
Symbol
I
CBO
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –10mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
40
– 0.35
–1.1
200
6
15
– 0.6
–1.5
V
V
MHz
pF
340
min
typ
max
– 0.1
Unit
µA
V
2SA719
2SA720
2SA719
2SA720
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
V
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
Transistor
P
C
— Ta
800
12
Ta=25˚C
700
10
–700
2SA719, 2SA720
I
C
— V
CE
–800
V
CE
=–10V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
600
500
400
300
200
100
0
0
20
40
60
80 100 120 140 160
8
I
B
=–1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
6
4
2
– 0.1mA
0
0
2
4
6
8
10
12
–100
0
0
–2
–4
–6
–8
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
–600
–500
–400
–300
–200
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
Ta=–25˚C
75˚C
I
C
/I
B
=10
600
h
FE
— I
C
V
CE
=–10V
Forward current transfer ratio h
FE
500
400
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
25˚C
300
Ta=75˚C
200
25˚C
–25˚C
100
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1
– 0.003
– 0.001
–1
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(A)
f
T
— I
E
240
50
C
ob
— V
CB
–120
V
CER
— R
BE
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
Ta=25˚C
I
C
=–2mA
Ta=25˚C
Collector output capacitance C
ob
(pF)
V
CB
=–10V
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–1
Transition frequency f
T
(MHz)
200
–100
160
–80
120
–60
2SA720
–40
2SA719
–20
80
40
0
1
3
10
30
100
0
–3
–10
–30
–100
1
3
10
30
100
300
1000
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
2
Transistor
I
CEO
— Ta
10
4
V
CE
=–10V
–10
–3
2SA719, 2SA720
Area of safe operation (ASO)
Single pulse
Ta=25˚C
Collector current I
C
(mA)
10
3
–1
I
CP
I
C
t=1s
t=10ms
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
– 0.3
– 0.1
– 0.03
– 0.01
10
2
10
– 0.003
1
0
40
80
120
160
200
– 0.001
– 0.1 – 0.3
–1
–3
–10
–30
–100
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
3
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