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DC1874

Description
Mixer Diode, Zero Barrier, KA Band to Millimeter Wave Band, Silicon
CategoryDiscrete semiconductor    diode   
File Size34KB,2 Pages
ManufacturerDynex
Websitehttp://www.dynexsemi.com/
Download Datasheet Parametric Compare View All

DC1874 Overview

Mixer Diode, Zero Barrier, KA Band to Millimeter Wave Band, Silicon

DC1874 Parametric

Parameter NameAttribute value
MakerDynex
package instructionR-MUMW-X1
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Minimum breakdown voltage1.5 V
Shell connectionCATHODE
ConfigurationSINGLE
Maximum diode capacitance0.035 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.11 V
frequency bandKA BAND TO MILLIMETER WAVE BAND
JESD-30 codeR-MUMW-X1
Number of components1
Number of terminals1
Maximum operating frequency46 GHz
Minimum operating frequency36 GHz
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formMICROWAVE
Pulse input maximum power0.5 W
Minimum pulse input power100 W
Certification statusNot Qualified
surface mountNO
technologyPLANAR DOPED BARRIER
Terminal formUNSPECIFIED
Terminal locationUPPER
Schottky barrier typeZERO BARRIER
Base Number Matches1

DC1874 Related Products

DC1874 DC1871 DC1870
Description Mixer Diode, Zero Barrier, KA Band to Millimeter Wave Band, Silicon Mixer Diode, Zero Barrier, X Band, 200ohm Z(V) Max, 6.5dB Noise Figure, Silicon Mixer Diode, Zero Barrier, X Band, 200ohm Z(V) Max, 9dB Noise Figure, Silicon
package instruction R-MUMW-X1 O-CEMW-N2 O-CEMW-N2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 1.5 V 1 V 1.2 V
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type MIXER DIODE MIXER DIODE MIXER DIODE
Maximum forward voltage (VF) 0.11 V 0.1 V 0.12 V
frequency band KA BAND TO MILLIMETER WAVE BAND X BAND X BAND
JESD-30 code R-MUMW-X1 O-CEMW-N2 O-CEMW-N2
Number of components 1 1 1
Number of terminals 1 2 2
Maximum operating frequency 46 GHz 12 GHz 12 GHz
Minimum operating frequency 36 GHz 8 GHz 8 GHz
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Package body material METAL CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR ROUND ROUND
Package form MICROWAVE MICROWAVE MICROWAVE
Pulse input maximum power 0.5 W 0.5 W 0.5 W
Minimum pulse input power 100 W 100 W 100 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO YES YES
technology PLANAR DOPED BARRIER PLANAR DOPED BARRIER PLANAR DOPED BARRIER
Terminal form UNSPECIFIED NO LEAD NO LEAD
Terminal location UPPER END END
Schottky barrier type ZERO BARRIER ZERO BARRIER ZERO BARRIER
Base Number Matches 1 1 1
maximum impedance - 200 Ω 200 Ω
maximum noise index - 6.5 dB 9 dB
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