NX8562LF342-BA-A datasheet, PDF

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NX8562LF342-BA-A: DescriptionLASER DIODE W/MONITOR,1.534UM PEAK WAVELENGTH,MODULE-BF; CategoryLED optoelectronic/LED photoelectric; File Size458KB，10 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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NX8562LF342-BA-A Overview

LASER DIODE W/MONITOR,1.534UM PEAK WAVELENGTH,MODULE-BF

NX8562LF342-BA-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Reach Compliance Code	unknown
Is Samacsys	N
Maximum forward current	0.3 A
Maximum forward voltage	1.5 V
Installation features	SURFACE MOUNT
Maximum operating temperature	70 °C
Minimum operating temperature	-20 °C
Optoelectronic device types	LASER DIODE
peak wavelength	1534 nm
Semiconductor material	InGaAsP
surface mount	YES
Base Number Matches	1

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LASER DIODE

NX8562LF

1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE

CW LIGHT SOURCE FOR DWDM APPLICATIONS

DESCRIPTION

The NX8562LF is a 1 550 nm Multiple Quantum Well (MQW) structured

Distributed Feed-Back (DFB) laser diode module with Polarization Maintain

Fiber (PMF).

It is designed as Continuous Wave (CW) light source and ideal for optical

transmission systems with external modulators. The device is available for

Dense Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-

T recommendations, enabling a wide range of applications.

FEATURES

• Output power

= 20 mW MIN.

• Available for DWDM wavelengths based on ITU-T recommendations

(100 GHz grid, please refer to the

ORDERING INFORMATION)

• Internal thermo-electric cooler and isolator

• Hermetically sealed 14-pin butterfly package

• Polarization maintain fiber pigtail

Document No. PL10214EJ03V0DS (3rd edition)

Date Published September 2005 CP(K)

The mark

shows major revised points.

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