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FR152

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15,
CategoryDiscrete semiconductor    diode   
File Size60KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

FR152 Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15,

FR152 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
Is SamacsysN
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
FR151---FR157
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 15
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FR
151
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
FR
152
100
70
100
FR
153
200
140
200
FR
154
400
280
400
1.5
FR
155
600
420
600
FR
156
800
560
800
FR
157
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
60.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
18
45
- 55---- +150
- 55---- + 150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261003
BL
GALAXY ELECTRICAL
1.

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