2SB1125 datasheet, PDF - EEWORLD Datasheet

2SB1125: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA SMALL, PCP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size100KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1125 Overview

Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA SMALL, PCP, 3 PIN

Parameter Name	Attribute value
Objectid	1480824076
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON COLLECTOR, 2 ELEMENTS
Minimum DC current gain (hFE)	3000
JESD-30 code	R-PSSO-F3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	1.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	170 MHz
VCEsat-Max	1.2 V

	2SB1125	2SD1625
Description	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA SMALL, PCP, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PCP, 3 PIN
Objectid	1480824076	1480824082
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.7 A	0.7 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	COMMON COLLECTOR, 2 ELEMENTS	COMMON COLLECTOR, 2 ELEMENTS
Minimum DC current gain (hFE)	3000	4000
JESD-30 code	R-PSSO-F3	R-PSSO-F3
Number of components	2	2
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	NPN
Maximum power consumption environment	1.3 W	1.3 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	170 MHz	200 MHz
VCEsat-Max	1.2 V	1.2 V

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