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2SD1625

Description
Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size100KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SD1625 Overview

Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PCP, 3 PIN

2SD1625 Parametric

Parameter NameAttribute value
Objectid1480824082
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.7 A
Collector-emitter maximum voltage50 V
ConfigurationCOMMON COLLECTOR, 2 ELEMENTS
Minimum DC current gain (hFE)4000
JESD-30 codeR-PSSO-F3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1.3 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max1.2 V

2SD1625 Related Products

2SD1625 2SB1125
Description Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PCP, 3 PIN Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ULTRA SMALL, PCP, 3 PIN
Objectid 1480824082 1480824076
package instruction SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PSSO-F3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.7 A 0.7 A
Collector-emitter maximum voltage 50 V 50 V
Configuration COMMON COLLECTOR, 2 ELEMENTS COMMON COLLECTOR, 2 ELEMENTS
Minimum DC current gain (hFE) 4000 3000
JESD-30 code R-PSSO-F3 R-PSSO-F3
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN PNP
Maximum power consumption environment 1.3 W 1.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 170 MHz
VCEsat-Max 1.2 V 1.2 V
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