M36W0R6050U4ZSF datasheet, PDF

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M36W0R6050U4ZSF: DescriptionMemory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56; Categorystorage storage; File Size532KB，28 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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M36W0R6050U4ZSF Overview

Memory Circuit, Flash+PSRAM, 4MX16, CMOS, PBGA56, 8 X 6 MM, 1.20 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, TFBGA-56

M36W0R6050U4ZSF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	BGA
package instruction	TFBGA, BGA56,6X10,20
Contacts	56
Reach Compliance Code	compliant
Is Samacsys	N
Maximum access time	70 ns
Other features	IT ALSO HAVING 32-MBIT PSRAM
JESD-30 code	R-PBGA-B56
JESD-609 code	e1
length	6 mm
memory density	67108864 bit
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+PSRAM
Number of functions	1
Number of terminals	56
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA56,6X10,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	4 mm
Base Number Matches	1

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M36W0Rx0x0UL4

32- or 64-Mbit (mux I/O, multiple bank, multilevel, burst) flash

memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP

Features

■

Multichip package

– 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit

(4 Mbit x 16) mux I/O multiple bank,

multilevel, burst) flash memory

– 1 die of 16/32 Mbit mux I/O, burst PSRAM

Supply voltage

– V

= V

DDQ

= 1.7 to 1.95 V

– V

PPF

= 9 V for fast programming

Electronic signature

– Manufacturer code: 20h

– 32 Mbit flash device codes:

Top - M36W0R5040U4: 8828h

Bottom - M36W0R5040L4: 8829h

– 64 Mbit flash device codes:

Top - M36W0R6040U4 and

M36W0R6050U4: 88C0h

Bottom - M36W0R6040L4 and

M36W0R6050L4: 88C1h

Synchronous/asynchronous read

– Synchronous burst read mode: 66 MHz

– Random access: 70 ns

Synchronous burst read suspend

Programming time

– 10 µs by word typical for factory program

– Double/quadruple word program option

Memory blocks

– Multiple bank memory array: 4 Mbit banks

– Parameter blocks (top or bottom location)

Dual operations

– Program erase in 1 bank, read in others

– No delay between read and write

Common flash interface (CFI)

Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

TFBGA56 (ZS)

8 x 6 mm

TFBGA88 (ZAM)

8 x 10 mm

■

– WP for block lock-down

■

Security

– 128 bit user programmable OTP cells

– 64 bit unique device number

100 000 program/erase cycles per block

Asynchronous modes

– Random read 70 ns access time

– Asynchronous write

Synchronous mode:

– NOR flash

– Full synchronous (burst read and write)

Burst read/write operations

– 4-, 8- and 16-word

– Clock frequency: 83 MHz

Low power consumption

– Active current: < 20 mA

– Standby current: 70 µA

Low power features

– Partial array self-refresh (PASR)

– Deep power-down (DPD) mode

– Automatic temperature-compensated self-

Refresh (ATSR)

Device summary

M36W0Rx0x0UL4

■

PSRAM

■

Flash memory

■

Table 1.

■

M36W0R5040U4

M36W0R6040U4

M36W0R6050U4

M36W0R5040L4

M36W0R6040L4

M36W0R6050L4

July 2008

Rev 6

1/28

www.numonyx.com

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