2SB1295 datasheet, PDF - EEWORLD Datasheet

2SB1295: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size115KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SB1295 Overview

Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN

Parameter Name	Attribute value
Objectid	1481158234
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.2 V

	2SB1295	2SD1935
Description	Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, CP, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, CP, 3 PIN
Objectid	1481158234	1481158381
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A
Collector-emitter maximum voltage	15 V	15 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	80	80
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	200 MHz
VCEsat-Max	0.2 V	0.2 V

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