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2SB1347

Description
Silicon PNP triple diffusion planar type(For high power amplification)
CategoryDiscrete semiconductor    The transistor   
File Size37KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SB1347 Overview

Silicon PNP triple diffusion planar type(For high power amplification)

2SB1347 Parametric

Parameter NameAttribute value
Parts packaging codeTO-3LA1
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)12 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)3.5 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1
Power Transistors
2SB1347
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2029
20.0±0.5
Unit: mm
φ
3.3±0.2
5.0±0.3
3.0
6.0
s
Features
q
q
q
q
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
(T
C
=25˚C)
Ratings
–160
–160
–5
–20
–12
120
3.5
150
–55 to +150
Unit
V
V
V
A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
20.0±0.5
2.5
2.0±0.3
3.0±0.3
1.0±0.2
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
1
2
3
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TOP–3L Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –160V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –5V, I
C
= –20mA
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –8A
V
CE
= –5V, I
C
= –8A
I
C
= –8A, I
B
= – 0.8A
V
CE
= –5V, I
C
= – 0.5A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
15
400
20
60
20
–1.8
–2.0
V
V
MHz
pF
200
min
typ
max
–50
–50
Unit
µA
µA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
2.0
1.5
3.0
1
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