Transistors
2SB1434
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency output amplification
Complementary to 2SD2177
I
Features
•
Low collector to emitter saturation voltage V
CE(sat)
•
Allowing supply with the radial taping
6.9±0.1
1.05
±0.05
2.5±0.1
(1.45)
0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
0.45
−0.05
+0.1
1
2
3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
*
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
−50
−50
−5
−3
−2
1
150
−55
to
+150
V
V
V
A
A
W
°C
°C
1.2±0.1
0.65
max.
0.45
+
0.1
−
0.05
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
2.5±0.1
Parameter
Symbol
Rating
Unit
0.45
−0.05
I
Absolute Maximum Ratings
T
a
=
25°C
+0.1
2.5±0.5
2.5±0.5
(HW Type)
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
*1
Collector to emitter saturation voltage
*1
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
R
120 to 240
S
170 to 340
No-rank
120 to 340
*1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= −20
V, I
E
=
0
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CE
= −2
V, I
C
= −200
mA
V
CE
= −2
V, I
C
= −1
A
I
C
= −1
A, I
B
= −50
mA
I
C
= −1
A, I
B
= −50
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
= 0,
f
=
1 MHz
Min
−50
−50
−5
120
60
Typ
Max
−
0.1
14.5±0.5
0.5
4.5±0.1
Unit
µA
V
V
V
340
−
0.2
−
0.85
110
40
60
−
0.3
−1.2
V
V
MHz
pF
Product of no-rank is not classified and have no indication for rank.
1
2SB1434
P
C
T
a
1.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness.
−2.4
Transistors
I
C
V
CE
Collector to emitter saturation voltage
V
CE(sat)
(V)
T
a
=
25°C
V
CE(sat)
I
C
−10
−3
−1
I
C
/
I
B
=
20
Collector power dissipation P
C
(W)
1.0
−2.0
Collector current I
C
(A)
0.8
−1.6
−
0.3
−
0.1
T
a
=
100°C
25°C
−25°C
0.6
−1.2
I
B
= −8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
0
–2
–4
–6
–8
–10
0.4
−
0.8
−
0.03
−
0.01
0.2
−
0.4
−
0.003
−
0.001
−
0.01
−
0.03
−
0.1
−
0.3
−1
−3
−10
0
0
0
20
40
60
80 100 120 140 160
Ambient temperature T
a
(
°C
)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
Base to emitter saturation voltage
V
BE(sat)
(V)
−100
−30
I
C
/
I
B
=
20
500
h
FE
I
C
V
CE
= −2
V
200
f
T
I
E
V
CB
= −10
V
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
−1
−3
−10
−10
−3
25°C
−1
T
a
= −25°C
75°C
400
160
300
T
a
=
100°C
200
25°C
−25°C
100
120
−
0.3
−
0.1
80
40
−
0.03
−
0.01
−
0.01
−
0.03
−
0.1
−
0.3
−1
−3
−10
0
−
0.01
−
0.03
−
0.1
−
0.3
0
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
V
CB
240
Collector output capacitance C
ob
(pF)
200
I
E
=
0
f
=
1 MHz
T
a
=
25°C
160
120
80
40
0
−1
−3
−10
−30
−100
Collector to base voltage V
CB
(V)
2
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