Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
s
Features
q
q
q
Unit: mm
15.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1548
2SB1548A
2SB1548
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25˚C)
Ratings
–60
–80
–60
–80
–5
–5
–3
25
2
150
–55 to +150
Unit
V
φ3.2±0.1
13.7±0.2
4.2±0.2
1.4±0.2
1.6±0.2
0.8±0.1
3.0±0.5
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
9.9±0.3
4.6±0.2
2.9±0.2
2.6±0.1
emitter voltage 2SB1548A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
0.55±0.15
1
2
A
A
W
˚C
˚C
2.54±0.3
3 5.08±0.5
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1548
2SB1548A
2SB1548
2SB1548A
2SB1548
2SB1548A
(T
C
=25˚C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
30
0.5
1.2
0.3
–60
–80
70
10
–1.8
–1.2
V
V
MHz
µs
µs
µs
250
V
min
typ
max
–200
–200
–300
–300
–1
Unit
µA
µA
mA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the rank classification.
1
Power Transistors
P
C
— Ta
40
–6
(1) T
C
=Ta
(2) Without heat sink (P
C
=2W)
T
C
=25˚C
2SB1548, 2SB1548A
I
C
— V
CE
–8
–7
–5
V
CE
=–4V
T
C
=25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
36
32
28
(1)
24
20
16
12
8
4
0
0
20
(2)
Collector current I
C
(A)
Collector current I
C
(A)
–6
–5
–4
–3
–2
–1
0
–4
I
B
=–100mA
–80mA
–3
–60mA
–40mA
–30mA
–2
–20mA
–16mA
–12mA
–8mA
–4mA
–1
0
40
60
80 100 120 140 160
0
–2
–4
–6
–8
–10
–12
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
–1.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
I
C
/I
B
=10
T
C
=25˚C
10000
h
FE
— I
C
1000
V
CE
=–4V
T
C
=25˚C
300
100
30
10
3
1
0.3
f
T
— I
C
V
CE
=–10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
– 0.3
– 0.1
– 0.03
– 0.01
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
3000
–1
–3
–10
0.1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–100
–30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
80
×
t2mm Al heat sink
(1)
(2)
10
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
–10
–3
–1
I
CP
I
C
DC
t=1ms
10ms
– 0.3
– 0.1
– 0.03
– 0.01
–1
1
10
–1
–3
–10
–30
–100 –300 –1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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