TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2A I(D),TO-220AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 2 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 50 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
| MTP2N20 | IRF710 | IRF711 | MTP4N10 | MTP4N08 | IRF612 | IRF613 | IRF511 | IRF513 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,2A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,4A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,2.6A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4.9A I(D),TO-220AB |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | compliant | compliant | unknown | compliant | compliant | unknown | unknown | compliant | compliant |
| Configuration | Single | Single | Single | Single | Single | Single | Single | Single | Single |
| Maximum drain current (Abs) (ID) | 2 A | 2 A | 2 A | 4 A | 4 A | 2.6 A | 2.6 A | 5.6 A | 4.9 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 50 W | 36 W | 36 W | 50 W | 50 W | 43 W | 43 W | 43 W | 43 W |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Maker | - | National Semiconductor（TI ） | National Semiconductor（TI ） | - | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） | National Semiconductor（TI ） |
| Maximum drain current (ID) | - | - | - | - | 4 A | 2.6 A | 2.6 A | 5.6 A | 4.9 A |
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