IRF612 datasheet, PDF - EEWORLD Datasheet

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IRF612: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB; CategoryDiscrete semiconductor The transistor; File Size28KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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IRF612 Overview

TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.6A I(D),TO-220AB

IRF612 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	2.6 A
Maximum drain current (ID)	2.6 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Number of components	1
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	43 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

IRF612 Related Products

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Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	compliant	unknown	compliant	compliant	compliant	unknown	compliant	compliant
Configuration	Single	Single	Single	Single	Single	Single	Single	Single	Single
Maximum drain current (Abs) (ID)	2.6 A	2 A	2 A	2 A	4 A	4 A	2.6 A	5.6 A	4.9 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	43 W	36 W	36 W	50 W	50 W	50 W	43 W	43 W	43 W
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maker	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	-	-	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）	National Semiconductor（TI ）
Maximum drain current (ID)	2.6 A	-	-	-	-	4 A	2.6 A	5.6 A	4.9 A

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