2SB1580 / 2SB1316
Transistors
Power Transistor (−100V ,
−2A)
2SB1580 / 2SB1316
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
External dimensions
(Unit : mm)
2SB1580
1.0
1.5
0.4
4.0
2.5
0.5
(1)
3.0
0.5
(3)
1.5
0.4
1.5
4.5
1.6
(2)
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
−100
−100
−8
−2
−3
2
1
10
150
−55
to
+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
°C
°C
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2.3
0.65
2SB1580
Collector
P
C
power
2SB1316
dissipation
Junction temperature
Tj
Tstg
Storage temperature
∗
1 Single pulse Pw=100ms
∗
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
(1)
2.3
0.9
∗2
0.75
∗1
2SB1316
0.4
5.5
1.5
(2)
0.9
(3)
0.5
Packaging specifications and h
FE
1.0
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
∗
Denotes h
FE
2SB1580
MPT3
1k to 10k
BN∗
T100
1000
2SB1316
CPT3
1k to 10k
−
TL
2500
0.5
1.5
2.5
9.5
2.3
0.8Min.
5.1
C0.5
ROHM : CPT3
EIAJ : SC-63
Equivalent circuit
C
B
R
1
R
1
3.5kΩ
R
2
300Ω
R
2
E
B : Base
C : Collector
E : Emitter
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
∗
Measured using pulse current.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−100
−100
−10
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
−
50
35
Max.
−
−
−
−10
−3
−1.5
10000
−
−
Unit
V
V
V
µA
mA
V
−
MHz
pF
Conditions
I
C
= −50µA
I
C
= −5mA
I
E
= −5mA
V
CB
= −100V
V
EB
= −7V
I
C
/I
B
= −1A/−1mA
V
CE
= −2V
, I
C
= −1A
V
CE
= −5V
, I
E
=0.1A
, f
=
30MHz
V
CB
= −10V
, I
E
=
0A , f
=
1MHz
∗
∗
Rev.A
6.5
(1) Base
(2) Collector
(3) Emitter
1/2
2SB1580 / 2SB1316
Transistors
Electrical characteristics curve
−2.0
COLLECTOR CURRENT : I
C
(A)
−1mA
COLLECTOR CURRENT : I
C
(A)
−0.7mA
−1.2
m
−
0.4
A
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
DC CURRENT GAIN : h
EF
−0.9mA
−1.6 −0.8mA
A
6m
−
0.
A
5m
−
0.
Ta=25°C
−10
−5
−2
Ta
=
25°C
V
CE
= −2V
10k
5k
2k
1k
500
200
100
50
20
10
−0.01 −0.02
−0.05 −0.1 −0.2 −0.5
−1
Ta
=
25°C
V
CE
= −2V
−0.8
I
B
=
mA
−
0.3
−0.4
0
0
−1
−2
−3
−4
−5
−2
−5
−10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Grounded emitter output characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
−50
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.05 −0.1
−0.2
−0.5
−1
−2
COLLECTOR OUTPUT CAPACITANCE: C
ob
(pF)
Ta
=
25°C
I
C
/ I
B
=1000
1000
500
200
100
50
20
10
5
2
1
−0.1 −0.2
−0.5
−1
−2
−5
COLLECTOR CURRENT : I
C
(A)
Ta
=
25°C
I
E
=0A
f=1MHz
50
20
10
5
2
1
500m
200m
100m
50m
20m
10m
0.2
0.5 1
2
5 10
Ta=25°C
∗
Single
NONREPETITIVE
PULSE
Ic Max. (Pulse
∗
)
Pw=10ms
∗
DC
Pw=100ms
∗
−5
−10
−10 −20
−50 −100
20 50 100 200 500
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Fig.5 Collector output capacitance
vs. collector-base voltage
Fig.6 Safe Operating area (2SB1580)
50
COLLECTOR CURRENT : I
C
(A)
20
10
5
2
1
500m
200m
100m
50m
20m
10m
Ta=25°C
∗
Single
NONREPETITIVE
PULSE
Ic Max. (Pulse
∗
)
Pw=10ms
∗
DC
Pw=100ms
∗
0.2
0.5 1
2
5 10
20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.7 Safe Operating area (2SB1316)
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Embedded System
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