Transistors
2SB0710
(2SB710)
, 2SB0710A
(2SB710A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602 (2SD602), 2SD0602A (2SD602A)
■
Features
•
Large collector current I
C
•
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
Unit: mm
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
1
2
(0.65)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SB0710
2SB0710A
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−30
−60
−25
−50
−5
−
0.5
−1
200
150
−55
to
+150
V
A
A
mW
°C
°C
V
Unit
V
10˚
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
1.1
+0.2
–0.1
Collector-emitter voltage 2SB0710
(Base open)
2SB0710A
1.1
+0.3
–0.1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
•
2SB0710: C
•
2SB0710A: D
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SB0710
2SB0710A
2SB0710
2SB0710A
V
EBO
I
CBO
h
FE1
*2
Symbol
V
CBO
V
CEO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −10
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−30
−60
−25
−50
−5
Typ
0 to 0.1
Max
Unit
V
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
V
−
0.1
µA
−
0.35
−
0.60
−1.1
200
6
15
−1.5
V
V
MHz
pF
85
40
340
h
FE2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Marking
symbol
2SB0710
2SB0710A
Q
85 to 170
CQ
DQ
R
120 to 240
CR
DR
S
170 to 340
CS
DS
No-rank
85 to 340
C
D
Product of no-rank is not
classified and have no
marking symbol for rank.
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJC00048CED
0.4
±0.2
5˚
1
2SB0710, 2SB0710A
P
C
T
a
240
−1
200
I
C
V
CE
T
a
=
25°C
−800
−700
I
C
I
B
V
CE
= −10
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
200
−1
000
Collector current I
C
(mA)
160
−800
I
B
=
−10
mA
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
120
−600
80
−400
40
−200
0
0
0
40
80
120
160
Collector current
I
C
(mA)
−600
−500
−400
−300
−200
−100
0
−2
−4
−6
−8
−10
0
–2
–4
–6
–8
–10
–12
0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
I
C
Collector-emitter saturation voltage
V
CE(sat)
(V)
−10
V
BE(sat)
I
C
−100
h
FE
I
C
600
V
CE
= −10
V
Base-emitter saturation voltage
V
BE(sat)
(V)
I
C
/
I
B
=
10
I
C
/
I
B
=
10
−1
T
a
=75°C
−25°C
−10
Forward current transfer ratio h
FE
500
400
−
0.1
25°C
25°C
−1
T
a
= −25°C
75°C
300
T
a
=
75°C
200
25°C
−25°C
−
0.01
−
0.1
100
−
0.001
−1
−10
−100
−1
000
−
0.01
−1
−10
−100
−1
000
0
−
0.01
−
0.1
−1
−10
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
240
V
CB
= −10
V
T
a
=
25°C
24
C
ob
V
CB
Collector-emitter voltage
(V)
V
(Resistor between B and E)
CER
I
E
=
0
f
=
1 MHz
T
a
=
25°C
−120
V
CER
R
BE
I
C
= −2
mA
T
a
=
25°C
Transition frequency f
T
(MHz)
200
20
−100
160
16
−80
120
12
−60
2SB0710A
−40
2SB0710
−20
80
8
40
4
0
1
10
100
0
−1
−10
−100
0
1
10
100
1 000
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
Base-emitter resistance R
BE
(kΩ)
2
SJC00048CED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
51mcu
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