HB56UW1672EJN-6A datasheet, PDF

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HB56UW1672EJN-6A: DescriptionEDO DRAM Module, 16MX72, 60ns, CMOS, DIMM-168; Categorystorage storage; File Size108KB，20 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HB56UW1672EJN-6A Overview

EDO DRAM Module, 16MX72, 60ns, CMOS, DIMM-168

HB56UW1672EJN-6A Parametric

Parameter Name	Attribute value
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
access mode	EDO
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1207959552 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.018 A
Maximum slew rate	2.52 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Base Number Matches	1

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HB56UW1672EJN Series

HB56UW1664EJN Series

16777216-word

72-bit High Density Dynamic RAM Module

16777216-word

64-bit High Density Dynamic RAM Module

ADE-203-643 (Z)

Preliminary

Rev. 0.0

Aug. 31, 1996

Description

The HB56UW1672EJN Series, HB56UW1664EJN Series belong to 8-byte DIMM (Dual in-line Memory

Module) family , and have been developed an optimized main memory solution for 4 and 8-byte processor

applications. The HB56UW1672EJN Series is a 16 M

72 Dynamic RAM Module, mounted 18 pieces of

64-Mbit DRAM (HM5164405AJ) sealed in SOJ package and 1 piece of serial EEPROM (24C02) for

Presence Detect (PD). The HB56UW1664EJN Series is a 16 M

64 Dynamic RAM Module, mounted 16

pieces of 64-Mbit DRAM (HM5164405AJ) sealed in SOJ package and 1 piece of serial EEPROM (24C02)

for Presence Detect (PD). The HB56UW1672EJN Series, HB56UW1664EJN Series offer Extended Data

Out (EDO) Page Mode as a high speed access mode. An outline of the HB56UW1672EJN Series,

HB56UW1664EJN Series are 168-pin socket type package (dual lead out). Therefore, the

HB56UW1672EJN Series, HB56UW1664EJN Series make high density mounting possible without surface

mount technology. The HB56UW1672EJN Series, HB56UW1664EJN Series provide common data inputs

and outputs. Decoupling capacitors are mounted beside each SOJ on the its module board.

Features

•

168-pin socket type package (Dual lead out)



Outline: 133.35 mm (Length)

25.40 mm (Height)

9.00 mm (Thickness)



Lead pitch : 1.27 mm

•

Single 3.3 V (±0.3 V)

•

High speed



Access time: t

RAC

= 60 ns/70 ns (max)



Access time: t

CAC

= 15 ns/18 ns (max)

Preliminary: This document contains information on a new product. Specifications and information

contained herein are subject to change without notice.

HB56UW1672EJN-6A Related Products

	HB56UW1672EJN-6A	HB56UW1664EJN-6A	HB56UW1664EJN-7A	HB56UW1672EJN-7A
Description	EDO DRAM Module, 16MX72, 60ns, CMOS, DIMM-168	EDO DRAM Module, 16MX64, 60ns, CMOS, DIMM-168	EDO DRAM Module, 16MX64, 70ns, CMOS, DIMM-168	EDO DRAM Module, 16MX72, 70ns, CMOS, DIMM-168
Parts packaging code	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N
access mode	EDO	EDO	EDO	EDO
Maximum access time	60 ns	60 ns	70 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	1207959552 bit	1073741824 bit	1073741824 bit	1207959552 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	72	64	64	72
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	16MX72	16MX64	16MX64	16MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum standby current	0.018 A	0.016 A	0.016 A	0.018 A
Maximum slew rate	2.52 mA	2.24 mA	1.92 mA	2.16 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1

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