Power Transistors
2SB949, 2SB949A
Silicon PNP epitaxial planar type Darlington
0.7±0.1
For power amplification and switching
Complementary to 2SD1275 and 2SD1275A
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
4.2±0.2
Unit: mm
q
q
16.7±0.3
q
High foward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
–60
–80
–60
–80
–5
–4
–2
35
2
150
–55 to +150
Unit
V
7.5±0.2
s
Features
φ3.1±0.1
14.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB949
2SB949A
2SB949
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
4.0
1.4±0.1
1.3±0.2
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
emitter voltage 2SB949A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
B
1
2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
3
Internal Connection
C
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB949
2SB949A
2SB949
2SB949A
2SB949
2SB949A
E
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –60V, I
E
= 0
V
CB
= –80V, I
E
= 0
V
CB
= –30V, I
B
= 0
V
CB
= –40V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –2A
V
CE
= –4V, I
C
= –2A
I
C
= –2A, I
B
= –8mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –2A, I
B1
= –8mA, I
B2
= 8mA,
V
CC
= –50V
20
0.4
1.5
0.5
–60
–80
1000
2000
10000
–2.8
–2.5
V
V
MHz
µs
µs
µs
min
typ
max
–1
–1
–2
–2
–2
Unit
mA
mA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
P
2000 to 5000 4000 to 10000
Rank
h
FE2
1
Power Transistors
P
C
— Ta
50
–5
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
I
B
=–2.0mA
–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
–2
– 0.4mA
2SB949, 2SB949A
I
C
— V
CE
–10
V
CE
=–4V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
30
–3
Collector current I
C
(A)
40
–4
–8
–6
25˚C
–4
T
C
=100˚C
–25˚C
20
(1)
10
(3)
(4)
0
0
20
40
60
(2)
–1
– 0.2mA
– 0.1mA
–2
0
80 100 120 140 160
0
–1
–2
–3
–4
–5
0
0
– 0.8
–1.6
–2.4
–3.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=250
–30
–10
–3
–1
T
C
=100˚C
–25˚C
25˚C
10
5
h
FE
— I
C
10000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=–4V
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3000
1000
300
100
30
10
3
1
– 0.1 – 0.3
10
4
T
C
=100˚C
25˚C
–25˚C
10
3
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
10
2
–1
–3
–10
10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
–100
–30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
–10
I
CP
–3
I
C
–1
DC
t=1ms
10ms
10
(2)
– 0.3
– 0.1
– 0.03
– 0.01
–1
1
2SB949A
10
–1
2SB949
–3
–10
–30
–100 –300 –1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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