B25DC100PBF datasheet, PDF - EEWORLD Datasheet

B25DC100PBF: DescriptionSilicon Controlled Rectifier, 55.5A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, POWER MODULE-4; CategoryAnalog mixed-signal IC Trigger device; File Size249KB，8 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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B25DC100PBF Overview

Silicon Controlled Rectifier, 55.5A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, POWER MODULE-4

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-PUFM-X4
Contacts	4
Reach Compliance Code	compliant
Is Samacsys	N
Shell connection	ISOLATED
Nominal circuit commutation break time	110 µs
Configuration	SINGLE WITH BUILT-IN SERIES DIODE
Critical rise rate of minimum off-state voltage	300 V/us
Maximum DC gate trigger current	60 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	100 mA
JESD-30 code	R-PUFM-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum rms on-state current	55.5 A
Maximum repetitive peak off-state leakage current	10000 µA
Off-state repetitive peak voltage	1000 V
Repeated peak reverse voltage	1000 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	40
Trigger device type	SCR
Base Number Matches	1

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