DATA SHEET
SILICON TRANSISTORS
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors
encapsulated into new hermetic stripline packages, "micro X".
These are designed for small signal amplifier, low noise amplifier,
and oscillator applications in the L to C band, and CML circuit use.
4.0 MIN.
PACKAGE DIMENSIONS
(Unit : mm)
1
0.5±0.05
0.1
−0.03
+0.06
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz
2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
4.0 MIN.
2
4.0 MIN.
4
3
0.5±0.05
2.55±0.2
φ
2.1
1.8 MAX.
0.55
1.
2.
3.
4.
Emitter
Collector
Emitter
Base
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200
°C,
but the ambient or storage
temperature is limitted to 150
°C.
The operating junction temperature is estimated with power consumption (P
T
) and
thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice.
Document No. P11809EJ2V0DS00 (2nd edition)
(Previous No. TC-1428)
Date Published August 1996 P
Printed in Japan
4.0 MIN.
45°
©
1981
2SC2148, 2SC2149
2SC2148
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
400
300
200
100
0
P
T
−Total
Power Dissipation−mW
with infinite heat sink; R
th(j-c)
130
°C/W
mounting on ceramic boad with solder
(Al
2
O
3
20
×
50
×
0.635 mm)
; R
th(j-a)
190
°C/W
free-air; R
th(j-a)
610
°C/W
50
100
150
200
48
T
A
−Ambient
Temperature−°C
2SC2149
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
−Total
Power Dissipation−mW
600
with infinite heat sink; R
th(j-c)
120
°C/W
400
mounting on ceramic boad with solder
(Al
2
O
3
20
×
50
×
0.635 mm)
; R
th(j-a)
180
°C/W
free-air; R
th(j-a)
600
°C/W
200
0
50
100 110
140 150
200
T
A
−Ambient
Temperature−°C
2
2SC2148, 2SC2149
2SC2148
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T(T
A
= 48
°C)
P
T(Tc = 150
°C)
T
j
Tstg
30
14
3.0
50
250
250
200
−65
to +150
V
V
V
mA
mW
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
*
Insertion Gain
Noise Figure
Maximum Available Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
ob
S
21e
2
NF
MAG
7.5
30
80
3.0
0.55
9.3
2.1
13.3
3.5
MIN.
TYP.
MAX.
0.1
0.1
200
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 15 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 10 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 3.0 mA, f = 500 MHz
V
CE
= 10 V, I
C
= 10 mA, f = 1.0 GHz
µ
A
µ
A
*
The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
50
200
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 10 V
V
CE
= 10 V
h
FE
−DC
Current Gain
100
I
C
−Collector
Current−mA
1
5
10
50
10
5
50
20
1
10
0.5
0.5
0.5
0.6
0.7
0.8
0.9
I
C
−Collector
Current−mA
V
BE
−Base
to Emitter Voltage−V
3
2SC2148, 2SC2149
2SC2149
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T(T
A
= 25
°C)
P
T(Tc = 140
°C)
T
j
T
stg
25
12
3.0
70
290
500
200
−65
to +150
V
V
V
mA
mW
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
*
Insertion Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
ob
S
21e
2
30
70
5.0
0.6
12.7
5.0
6.7
1.7
Noise Figure
NF
2.6
17
Maximum Available Gain
MAG
11
4.0
MIN.
TYP.
MAX.
0.1
0.1
200
GHz
pF
dB
dB
dB
dB
dB
dB
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 5.0 mA
V
CE
= 10 V, I
C
= 20 mA
UNIT
TEST CONDITIONS
V
CB
= 15 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 1.0 GHz
f = 2.0 GHz
µ
A
µ
A
*
The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (T
A
= 25
°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
70
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 10 V
V
CE
= 10 V
I
C
−Collector
Current−mA
1
5
10
50 70
100
h
FE
−DC
Current Gain
20
10
5
50
2
1
20
10
0.5
0.5
0.5
0.6
0.7
0.8
0.9
I
C
−Collector
Current−mA
V
BE
−Base
to Emitter Voltage−V
5
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