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KM44V1000CP-7

Description
Fast Page DRAM, 1MX4, 70ns, CMOS, PDIP20, 0.300 INCH, DIP-20
Categorystorage    storage   
File Size55KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM44V1000CP-7 Overview

Fast Page DRAM, 1MX4, 70ns, CMOS, PDIP20, 0.300 INCH, DIP-20

KM44V1000CP-7 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionDIP, DIP20,.3
Contacts20
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-PDIP-T20
JESD-609 codee0
length26.4 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP20,.3
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height5.08 mm
self refreshNO
Maximum standby current0.0005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
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