TIP33LEADFREE datasheet, PDF - EEWORLD Datasheet

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TIP33LEADFREE: DescriptionPower Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin; CategoryDiscrete semiconductor The transistor; File Size440KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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TIP33LEADFREE Overview

Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin

TIP33LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-218
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz
Base Number Matches	1

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TIP33 TIP33A TIP33B TIP33C

TIP34 TIP34A TIP34B TIP34C

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY

SILICON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP33 and TIP34

series devices are complementary silicon high power

transistors manufactured by the epitaxial base process,

designed for general purpose amplifier and switching

applications.

MARKING: FULL PART NUMBER

TO-218 TRANSISTOR CASE

TIP33

SYMBOL TIP34

VCBO

VCEO

VEBO

ICM

TJ, Tstg

TIP33A TIP33B TIP33C

TIP34A TIP34B TIP34C

100

5.0

3.0

3.5

-65 to +150

35.7

1.56

MAXIMUM RATINGS:

(TC=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation (TA=25°C)

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICEO

VCE=30V (TIP33, TIP33A, TIP34, TIP34A)

ICEO

VCE=60V (TIP33B, TIP33C, TIP34B, TIP34C)

ICES

IEBO

BVCEO

VCE(SAT)

VBE(ON)

hFE

hfe

VCE=Rated VCEO

VEB=5.0V

IC=30mA (TIP33, TIP34)

IC=30mA (TIP33A, TIP34A)

IC=30mA (TIP33B, TIP34B)

IC=30mA (TIP33C, TIP34C)

IC=3.0A, IB=0.3A

IC=10A, IB=2.5A

VCE=4.0V, IC=3.0A

VCE=4.0V, IC=10A

VCE=4.0V, IC=1.0A

VCE=4.0V, IC=3.0A

VCE=10V, IC=0.5A, f=1.0kHz

VCE=10V, IC=0.5A, f=1.0MHz

3.0

MAX

0.7

0.4

1.0

UNITS

100

1.0

4.0

1.6

3.0

100

MHz

R1 (18-July 2013)

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	TIP33LEADFREE	TIP33ALEADFREE	TIP33CLEADFREE	TIP34BLEADFREE	TIP33BLEADFREE	TIP34CLEADFREE	TIP34LEADFREE	TIP34ALEADFREE
Description	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-218, Plastic/Epoxy, 3 Pin
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
Collector-emitter maximum voltage	40 V	60 V	100 V	80 V	80 V	100 V	40 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	20	20	20	20	20	20
JEDEC-95 code	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218	TO-218
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e3	e3	e3	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260	260	260	260	260	260	260
Polarity/channel type	NPN	NPN	NPN	PNP	NPN	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	10	10	10	10	10	10	10	10
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz	3 MHz
Shell connection	-	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-	COLLECTOR

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