KSD985/986
KSD985/986
Low Frequency Power Amplifier
• Low Speed Switching Industrial Use
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
Parameter
Collector-Base Voltage
Collector-Emitter Volage
: KSD985
: KSD986
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
60
80
8.0
1.5
3.0
0.15
1.0
10
150
- 55 ~ 150
V
V
V
A
A
A
W
W
°C
°C
Value
150
Units
V
* PW≤300µs, Duty Cycle10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Test Condition
V
CB
= 60V, I
E
= 0
V
CE
= 60V, R
BE
= 51Ω
@ T
C
= 125°C
V
CE
= 60V, V
BE
(off) = -1.5A
V
CE
= 60V, V
BE
(off) = -1.5A
@ T
C
= 125°C
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
V
CC
= 50V, I
C
= 1A
I
B1
= - I
B2
= 1mA
R
L
= 50Ω
0.5
1.0
1.0
1000
2000
Min.
Typ.
Max.
10
1.0
10
1.0
1.0
30000
1.5
2.0
V
V
µs
µs
µs
Units
µA
mA
µA
mA
mA
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classification
Classification
h
FE2
R
2000 ~ 5000
O
4000 ~ 10000
Y
8000 ~ 30000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD985/986
Typical Characteristics
2.0
I
B
= 220uAI
B
= 200uA
I = 160uA
I
B
= 180uA
B
I
B
= 140uA
10000
V
CE
= 2V
I
C
[A], COLLECTOR CURRENT
1.6
1.2
I
B
= 100uA
h
FE
, DC CURRENT GAIN
5.0
I
B
= 120uA
1000
0.8
I
B
= 80uA
0.4
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
100
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
160
I
C
= 1000 I
B
140
dT(%), I
C
DERATING
120
V
BE
(sat)
100
1
80
S/b
L im
ite
d
60
Di
ss
ip
V
CE
(sat)
40
at
ion
Li
m
20
ite
d
0.1
0.1
0
1
10
0
25
50
o
75
100
125
150
175
200
I
C
[A], COLLECTOR CURRENT
T
C
[ C], CASE TEMPERATURE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Derating Curve Of Safe Operating Areas
2.50
2.25
10
u
30
I
C
[A], COLECTOR CURRENT
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
10
20
30
40
50
60
70
80
90
100
I
C
[A], COLLECTOR CURRENT
1
D is
si p
a t io
nL
i mi
3m
s
DC
30
0
1m
us
s
0
10
s
us
te d
b
S/
m
Li
0.1
d
it e
0.01
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Areas
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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