KST1623L3/L4/L5/L6/L7
KST1623L3/L4/L5/L6/L7
Amplifier Transistor
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Parameter
Value
50
40
5.0
100
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
: KST1623L3
: KST1623L4
: KST1623L5
: KST1623L6
: KST1623L7
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
V
CE
=6V, I
C
=1.0mA
60
90
135
200
300
120
180
270
400
600
0.3
1.0
0.6
200
0.7
V
V
V
MHz
Test Condition
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
Min.
Max.
100
100
Units
nA
nA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1.0mA
I
C
=10mA, V
CE
=6V, f=100MHz
MARKING CODE
Type
Mark
KST1623L3
L3
KST1623L4
L4
KST1623L5
L5
KST1623L6
L6
KST1623L7
L7
Marking
L3
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KST1623L3/L4/L5/L6/L7
Typical Characteristics
100
100
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
80
I
B
= 300
µ
A
60
I
C
[mA], COLLECTOR CURRENT
I
B
= 400
µ
A
I
B
= 350
µ
A
10
I
B
= 250
µ
A
I
B
= 200
µ
A
40
I
B
= 150
µ
A
I
B
= 100
µ
A
1
20
I
B
= 50
µ
A
0
0
4
8
12
16
20
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Transfer Characteristic
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10k
10k
V
CE
= 6V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1k
1k
V
BE
(sat)
100
100
V
CE
(sat)
10
1
10
100
1000
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
1000
I
E
= 0
f = 1MHz
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
V
CE
= 6V
Cob [pF], CAPACITANCE
10
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E
2
CMOS™
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®
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DISCLAIMER
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ISOPLANAR™
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®
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SyncFET™
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UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
RF/Wirelessly
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