2SC3596 datasheet, PDF - EEWORLD Datasheet

2SC3596: DescriptionRF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126, TO-126, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size118KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SC3596 Overview

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126, TO-126, 3 PIN

Parameter Name	Attribute value
Objectid	1435952760
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	700 MHz

	2SC3596	2SA1402
Description	RF Power Bipolar Transistor, 1-Element, Silicon, NPN, TO-126, TO-126, 3 PIN	Ultrahigh-Definition CRT Display Video Output Applications
Parts packaging code	SIP	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.3 A	0.3 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	140 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	PNP
Maximum power dissipation(Abs)	1.2 W	1.2 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	700 MHz	700 MHz

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