VISHAY
BAS16
Vishay Semiconductors
Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Ultra fast switching speed
• Surface mount package ideally suited for auto-
matic insertion
• High conductance
3
16923
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 8 mg
Polarity:
cathode band
Marking:
KA6
Packaging Codes/Options:
E8/10 K per 13" reel (8 mm tape), 30 K/box
E9/3K per 7" reel (8 mm tape), 30 K/box
1
2
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Non repetitive peak reverse voltage
Repetitive peak reverse voltage = Working
peak reverse voltage = DC Blocking voltage
Peak forward surge current
Average forward current
t
p
= 1 s
t
p
=1
µs
half wave rectification with resistive load and
f
≥
50 MHz, on ceramic substrate
8 mm x10 mm x 0.7 mm
on ceramic substrate
8 mm x 10 mm x 0.7 mm
on ceramic substrate
8 mm x 10 mm x 0.7 mm
Test condition
Symbol
V
RM
V
RRM
= V
RWM
= V
R
I
FSM
I
FSM
I
FAV
Value
100
75
1
2
150
Unit
V
V
A
A
mA
Forward current
Power dissipation
I
F
P
tot
300
350
mA
mW
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction and storage
temperature range
Test condition
on ceramic substrate
8 mm x 10 mm x 0.7 mm
Symbol
R
thJA
T
j
= T
stg
Value
357
- 55 to + 150
Unit
K/W
°C
Document Number 85539
Rev. 3, 13-Jun-04
www.vishay.com
1
BAS16
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Reverse current
V
R
= 75 V
V
R
= 75 V, T
j
= 150 °C
V
R
= 25 V, T
j
= 150 °C
Diode capacitance
Reverse recovery time
V
R
= 0, f = 1 MHz
I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
Symbol
V
F
V
F
V
F
V
F
I
R
I
R
I
R
C
D
t
rr
Min
Typ.
Max
715
855
1
1.25
1
50
30
4
6
VISHAY
Unit
mV
mV
V
V
µA
µA
µA
pF
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
1000
I
F
– Forward Current ( mA)
100
T
j
=100°C
10
T
j
=25°C
1
0.1
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
V
F
– Forward V
oltage ( V )
Figure 1. Forward Current vs. Forward Voltage
10000
I
R
– Reverse Current ( nA)
V
R
= 20 V
1000
100
10
1
0
14357
25
50
75
100 125 150 175 200
T
j
– Junction Temperature (°C )
Figure 2. Reverse Current vs. Junction Temperature
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2
Document Number 85539
Rev. 3, 13-Jun-04
BAS16
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85539
Rev. 3, 13-Jun-04
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