MCC
Features
omponents
20736 Marilla
Street Chatsworth
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$
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BAV19W
THRU
BAV21W
410mW
Small Signal
Diodes
120 to 250 Volts
•
•
•
Silicon Epitaxial Planar Diodes
For General Purpose
This diode is also available in other case.
•
•
•
Mechanical Data
Case: SOD-123, Molded Plastic
Weight: approx. 0.01g
Marking code: BAV19W=A8
BAV20W=T2
BAV21W=T3
SOD123
A
B
Maximum Ratings
Symbol
V
R
BAV19W
BAV20W
BAV21W
Repetitive Peak Reverse Voltage BAV19W
BAV20W
BAV21W
O (1)
Forward DC Current at Tamb=25 C
Rectified Current (Average) Half Wave
Rectification with Resist. Load at
Tamb=25
O
C
(1)
Repetitive Peak Forward Current at f>50Hz,
Tamb=25
O
C
(1)
Surge Forward Current at t<1s, Tj=25
O
C
Power Dissipation at Tamb=25
O
C
(1)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature
Rating
Continuous Reverse Voltage
Rating
100
150
200
120
200
250
250
200
625
1.0
410
375
-55 to +150
-55 to +150
Max
1.00
1.25
100
15
100
15
100
15
---
---
50
Unit
V
C
E
V
RRM
I
F
I
F(AV)
I
FRM
I
FSM
P
tot
R
JA
T
J
T
STG
Symbol
V
F
V
mA
mA
H
D
G
J
mA
A
mW
mW
O
C
O
C
Units
V
nA
uA
nA
uA
nA
uA
OHM
pF
ns
0.036”
DIM
A
B
C
D
E
G
H
J
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Parameter
Min
Typ
Forward Voltage
(I
F
=100mA)
---
---
(I
F
=200mA)
---
---
I
R
Leakage Current
---
(V
R
=100V)
BAV19W ---
O
---
(VR=100V, Tj=100 C)
BAV19W ---
---
(V
R
=150V)
BAV20W ---
O
---
(VR=150V, Tj=100 C)
BAV20W ---
---
(V
R
=200V)
BAV21W ---
O
---
(VR=200V, Tj=100 C)
BAV21W ---
r
f
Dynamic Forward Resistance
---
5.0
(I
F
=10mA)
C
tot
Capacitance
---
1.5
(V
R
=0, f=1.0MHz)
t
rr
Reverse Recovery Time
(I
F
=30mA, I
R
=30mA)
---
---
(Irr=3.0mA, R =100OHMS)
L
*(1) Valid provided that leads are kept at ambient temperature
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.140
.152
3.55
3.85
.100
.112
2.55
2.85
.055
.071
1.40
1.80
-----
.053
-----
1.35
.012
.031
0.30
.78
.006
-----
0.15
-----
-----
.01
-----
.25
-----
.006
-----
.15
SUGGESTED SOLDER
PAD LAYOUT
0.093"
NOTE
0.048”
Revision: 3
www.mccsemi.com
2002/12/31