FLM1213-8C datasheet, PDF - EEWORLD Datasheet

FLM1213-8C: DescriptionRF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2; CategoryDiscrete semiconductor The transistor; File Size105KB，2 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

Download Datasheet Parametric View All

FLM1213-8C Overview

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (ID)	2.6 A
FET technology	JUNCTION
highest frequency band	KU BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	42.8 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	GALLIUM ARSENIDE

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components