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BAV19W

Description
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size319KB,4 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
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BAV19W Overview

Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2

BAV19W Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PDSO-G2
Reach Compliance Codecompliant
Is SamacsysN
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.41 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
BAV19W-BAV21W
Technical Data
Data Sheet N0591, Rev. C
BAV19W-BAV21W SURFACE MOUNT
FAST SWITCHING DIODE
Features
High Conductance
Fast Switching
Surface Mount Package Ideally Suited for Automatic
Insertion
For General Purpose Switching Applications
This is a Pb - Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
SOD-123
Schematic & Pin Configuration
Mechanical Characteristics
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per MIL-STD-
202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams(approx)
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
@t=8.3ms
Power Dissipation
Typical Thermal Resistance Junction to Ambient
Junction Temperature Range
Storage Temperature Range
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
P
d
R
θJA
T
J
T
STG
BAV19W
120
100
71
BAV20W
200
150
106
200
BAV21W
250
200
141
mA
A
mW
°C/W
°C
°C
Units
V
V
2.0
500
250
150
-65 to +150
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

BAV19W Related Products

BAV19W BAV21W BAV20W
Description Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 150V V(RRM), Silicon, PLASTIC PACKAGE-2
Is it Rohs certified? incompatible incompatible incompatible
package instruction R-PDSO-G2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Reach Compliance Code compliant compliant compliant
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-G2 R-PDSO-G2 R-PDSO-G2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum output current 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.41 W 0.41 W 0.41 W
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 200 V 150 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker - Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.

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