DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3841
UHF OSCILLATOR AND UHF MIXER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DESCRIPTION
The 2SC3841 is an NPN silicon epitaxial transistor intended for use as
UHF oscillators and a UHF mixer in a tuner of a TV receiver.
The device features stable oscillation and small frequency drift against
any change of the supply voltage and the ambient temperature.
It is designed for use in small type equipments especially recommendd
for Hybried Integrated Circuit and other applications.
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
0.4
−0.05
+0.1
1.5
0.65
−0.15
+0.1
0.95
0.95
FEATURES
• High Gain Bandwidth Procuct; f
T
= 4.0 GHz TYP.
• Low Collector to Base Time Constant; C
C
r
b’b
= 4.0 ps TYP.
• Low Output Capacitance; C
ob
= 1.5 pF MAX.
2.9±0.2
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Maximum Voltages and Current
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Maximum Power Dissipation
Total Power Dissipation
Maximum Power Temperutures
Junction Temperature
Storage Temperature
0.3
Marking
P
T
T
j
T
stg
200
150
55 to +150
mW
C
C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
Collector Cutoff Current
DC Current Gain
Collector Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Collector to Base Time Constatnt
SYMBOL
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
C
C
r
b’b
2.5
40
100
0.09
4.0
0.85
4.0
1.5
10.0
MIN.
TYP.
MAX.
0.1
200
0.5
V
GHz
pF
ps
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
CE
= 10 V, I
C
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
V
CE
= 10 V, I
E
=
5.0 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
E
=
5.0 mA, f = 31.9 MHz
A
h
FE
Classification
Class
Marking
h
FE
T62/P *
T62
40 to 80
T63/Q *
T63
60 to 120
T64/R *
T64
100 to 200
* Old Specification / New Specification
Document No. P10362EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
0 to 0.1
V
CBO
V
CEO
V
EBO
I
C
25
12
3
30
V
V
V
mA
1.1 to 1.4
©
0.16
−0.06
+0.1
0.4
−0.05
+0.1
1
3
1986
2SC3841
TYPICAL CHARACTERISTICS (T
A
= 25
C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
V
CE
= 10 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 10 V
70
50
I
C
-Collector Current-mA
0.1
0.2
0.5
1
2
5
10
20
40
I
C
-Collector Current-mA
h
FE
-DC Current Gain
20
10
5
2
1
0.5
50
20
10
5
0.05
0.6
0.7
0.8
0.9
V
BE
-Base to Emitter Voltage-V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
5
V
CE
= 10 V
15
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 10 V
f = 1.0 GHz
f
T
-Gain Bandwidth Product-GHz
2
|S
21e
|
2
-Insertion Gain-dB
1
2
5
10
20
40
10
1
0.5
5
0.2
0.1
0.5
0
0.5
1
2
5
10
20
40
I
C
-Collector Current-mA
I
C
-Collector Current-mA
C
C
.r
b'b
vs.
COLLECTOR CURRENT
10
8
6
4
2
V
CE
= 10 V
I
E
=
−50
mA
f = 39.1 MHz
f = 1.0 MHz
C
ob
-Output Capacitance pF
3
2
1
0.5
1
2
5
10
20
C
C
.r
b'b
-Collector to Base Time Constant-ps
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0
0.5
1
2
5
10
20
40
V
CB
-Collector to Base Voltage-V
I
C
-Collector Current-mA
2
Talking
京公网安备 11010802033920号
EEWORLD
