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2SC3857

Description
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
CategoryDiscrete semiconductor    The transistor   
File Size24KB,1 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Environmental Compliance
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2SC3857 Overview

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

2SC3857 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionMT-200, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)15 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
2SC3857
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1493)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
200
200
6
15
5
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=200V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=5A
I
C
=10A, I
B
=1A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
200
min
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
50
min
3.0
max
20
typ
250
typ
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
3.0
+0.3
-0.1
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.3typ
t
stg
(
µ
s)
2.4typ
t
f
(
µ
s)
0.4typ
Weight : Approx 18.4g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
1.
1A
V
C E
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l ta g e V
C E (s a t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
( V
CE
=4 V )
5A
15
60
A
0m
40
0mA
C ol l e c t o r C ur r en t I
C
( A)
Co l l e c t o r Cu r r en t I
C
( A)
20 0m A
10
2
10
10 0m A
p)
˚C
I
C
= 1 5A
10 A
5A
0
0
1
2
Bas e C ur r e nt I
B
( A)
3
4
0
0
0
0
1
2
3
4
25˚C
–30˚C
125
(Case
5
I
B
=50m A
1
5
(Ca
se
T
1
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
Temp
)
em
2
Col l e ct or - Em it t er V ol ta ge V
C E
(V)
(V
C E
= 4 V )
300
D C C u r r e n t Ga i n h
FE
DC C u r r e n t G ai n h
FE
300
( V
C E
= 4V)
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
1 25 ˚ C
1
Typ
100
100
25 ˚ C
0.5
50
50
– 3 0˚ C
20
0.02
0.1
0 .5
1
5
10 15
20
0.02
0.1
0.5
1
5
1 0 15
0.1
1
10
100
Time t(ms)
10 0 0
2 00 0
Co l l ect o r Cu rre nt I
C
(A )
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
40
50
Safe Operating Area
(Single Pulse)
160
20
Pc – Ta Derating
3m
m
s
s
C ut- off F re q u e n c y f
T
( M H
Z
)
30
Co llec t o r C u r r e n t I
C
( A )
D
10
5
C
M ax im um P o w e r Di s s i p a ti o n P
C
( W )
10ms
120
10
0m
W
ith
Typ
s
In
fin
ite
he
20
80
at
si
nk
1
0.5
Without Heatsink
Natural Cooling
10
40
0
–0.02
0.1
–0 . 1
–1
Em i t t er C u rre nt I
E
(A)
–10
2
10
10 0
30 0
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
5
0
W i t ho u t H ea t s i nk
0
25
50
75
10 0
125
150
A m b i e n t T em p e r a tu r e T a ( ˚ C )
80
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