2SC3977 datasheet, PDF - EEWORLD Datasheet

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2SC3977: DescriptionSilicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); CategoryDiscrete semiconductor The transistor; File Size41KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html

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2SC3977 Overview

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

2SC3977 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220F
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	800 V
Configuration	SINGLE
Minimum DC current gain (hFE)	3
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	15 MHz
Base Number Matches	1

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Power Transistors

2SC3977, 2SC3977A

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

0.7±0.1

Unit: mm

10.0±0.2

5.5±0.2

2.7±0.2

4.2±0.2

φ3.1±0.1

1.4±0.1

1.3±0.2

0.5

+0.2

–0.1

0.8±0.1

2.54±0.25

5.08±0.5

1

2

3

4.2±0.2

s

Features

q

High-speed switching

High collector to base voltage V

CBO

Wide area of safe operation (ASO)

Satisfactory linearity of foward current transfer ratio h

FE

Full-pack package which can be installed to the heat sink with

one screw

(T

C

=25˚C)

Ratings

900

1000

900

1000

800

7

2

1

0.3

30

2

150

–55 to +150

Unit

V

16.7±0.3

14.0±0.5

Parameter

Collector to

base voltage

Collector to

2SC3977

2SC3977A

2SC3977

Symbol

V

CBO

V

CES

V

CEO

V

EBO

I

CP

I

C

I

B

emitter voltage 2SC3977A

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power T

C

=25°C

dissipation

Ta=25°C

Junction temperature

Storage temperature

V

A

W

˚C

Solder Dip

s

Absolute Maximum Ratings

4.0

7.5±0.2

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

P

C

T

j

T

stg

s

Electrical Characteristics

Parameter

Collector cutoff

current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

2SC3977

2SC3977A

(T

C

=25˚C)

Symbol

I

CBO

I

EBO

V

CEO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

t

on

t

stg

t

f

Conditions

V

CB

= 900V, I

E

= 0

V

CB

= 1000V, I

E

= 0

V

EB

= 7V, I

C

= 0

I

C

= 10mA, I

B

= 0

V

CE

= 5V, I

C

= 0.1A

V

CE

= 5V, I

C

= 0.2A

I

C

= 0.2A, I

B

= 0.04A

I

C

= 0.2A, I

B

= 0.04A

V

CE

= 10V, I

C

= 0.05A, f = 1MHz

I

C

= 0.2A, I

B1

= 0.04A, I

B2

= – 0.08A,

V

CC

= 250V

15

0.7

2.5

0.3

800

8

3

1.5

V

MHz

µs

min

typ

max

50

Unit

µA

V

1

2SC3977 Related Products

	2SC3977	2SC3977A
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
Parts packaging code	TO-220F	TO-220F
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	800 V	800 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	3	3
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	2 W	2 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	15 MHz	15 MHz
Base Number Matches	1	1

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