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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC3977A
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2SC3977A

Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
CategoryDiscrete semiconductor    The transistor   
File Size41KB，3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SC3977A Overview

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

2SC3977A Parametric

Parameter NameAttribute value
Parts packaging codeTO-220F
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)1 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)3
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1

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Power Transistors
2SC3977, 2SC3977A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
s
Features
q
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
900
1000
900
1000
800
7
2
1
0.3
30
2
150
–55 to +150
Unit
V
16.7±0.3
14.0±0.5
Parameter
Collector to
base voltage
Collector to
2SC3977
2SC3977A
2SC3977
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
emitter voltage 2SC3977A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
V
A
A
A
W
˚C
˚C
Solder Dip
s
Absolute Maximum Ratings
4.0
7.5±0.2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
P
C
T
j
T
stg
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
2SC3977
2SC3977A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
CB
= 1000V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.2A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= – 0.08A,
V
CC
= 250V
15
0.7
2.5
0.3
800
8
3
1.5
1.5
V
V
MHz
µs
µs
µs
min
typ
max
50
50
50
Unit
µA
µA
V
1

2SC3977A Related Products

2SC3977A 2SC3977
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
Parts packaging code TO-220F TO-220F
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 800 V 800 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 3 3
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 2 W 2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz
Base Number Matches 1 1

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