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SHM60FSMSTX

Description
Rectifier Diode, 1 Element, 0.1A, 6000V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size81KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SHM60FSMSTX Overview

Rectifier Diode, 1 Element, 0.1A, 6000V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

SHM60FSMSTX Parametric

Parameter NameAttribute value
package instructionE-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LELF-R2
Number of components1
Number of terminals2
Maximum output current0.1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6000 V
Maximum reverse recovery time0.15 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SHM15F-SHM140F
and
SHM15FSMS – SHM40FSMS
50-250 mAmp
1500
14000 VOLTS
FAST RECOVERY
HIGH VOLTAGE
RECTIFIER
FEATURES:
Fast Recovery: 150-200 nsec Maximum
PIV to 14000 Volts
Hermetically Sealed Axial Lead Package
Void-Free Construction
Metallurgically Bonded
175°C Maximum Operating Temperature
Also Available in Standard and Ultra Fast
Recovery Versions. Contact Factory.
TX, TXV, and Space Level Screening Available
2/
Designer’s Data Sheet
Part Number / Ordering Information
SHM_ _ F __ __
L
Screening
2/
1/
= None
TX = TX Level
TXV = TXV Level
S = S Level
____ = Axial Leaded
SMS = Surface Mount Square Tab
L
Recovery Time
L
F = Fast Recovery
Voltage
L
Package
15 = 1500 V
20 = 2000 V
25 = 2500 V
30 = 3000 V
40 = 4000 V
50 = 5000 V
60 = 6000 V
80 = 8000 V
100 = 10000 V
120 = 12000 V
140 = 14000 V
ELECTRICAL CHARACTERISTICS
Part
Number
Symbol
Units
Conditions
Volts
25°C
Peak
Inverse
Voltage
PIV
Average Rectifier Current
Maximum
Reverse
Current
IR @ PIV
μA
25°C
100°C
Maximum
Forward
Voltage
VF
4/
Volts
25°C
8.0
8.0
8.0
12
12
12
18
18
18
20
24
Maximum
Surge
Current
(1 Cycle)
IFSM
Amps
25°C
15
15
15
10
10
10
5
5
5
5
1
Maximum
Reverse
Recovery
Time
tRR
7/
nsec
25°C
150
150
150
150
150
150
150
150
150
150
200
Maximum
Junction
Capacitance
CJ
pF
VR = 100V
fT = 1MHZ
8
8
8
4
4
4
2
2
2
2
2
Typical
Thermal
Impedance
θ
JL
θ
JE
°C/W
SHM
65
65
65
65
65
65
65
65
65
65
95
SMS
55
55
55
55
55
55
55
55
55
55
85
I0
mA
100°C
Axial
SMS
SHM15F
1500
250
160
185
1.0
25
SHM20F
2000
250
160
185
1.0
25
SHM25F
2500
250
160
185
1.0
25
SHM30F
3000
150
100
110
1.0
25
SHM40F
4000
150
100
110
1.0
25
SHM50F
5000
150
100
110
1.0
25
SHM60F
6000
100
65
75
1.0
25
SHM80F
8000
100
65
75
1.0
25
SHM100F
10000
100
65
75
1.0
25
SHM120F
12000
100
65
75
1.0
25
SHM140F
14000
50
35
40
1.0
25
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Operating and testing over 10,000 V/inch may require encapsulation or immersion in a
suitable dielectric material.
4/ I
F
= I
O;
Max. forward voltage measured with instantaneous forward pulse of 300µsec
minimum.
5/ Max. lead/end tab temp for soldering is 250°C, 3/8” from the case for 5 sec maximum.
6/ Operating and storage temperature: -65°C to +175°C.
7/ Reverse Recovery Test Conditions: IF=50mA, IR=100mA, IRR=25mA, TA=25°C.
8/ Consult manufacturing for operating curves.
Axial
SMS
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RV0011C
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