This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SC3979, 2SC3979A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7
±0.1
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
4.2
±0.2
2.7
±0.2
■
Features
•
High-speed switching
•
High collector-base voltage (Emitter open) V
CBO
•
Wide safe operation area
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Full-pack package which can be installed to the heat sink with one screw
16.7
±0.3
M
ain
Di
sc te
on na
tin nc
ue e/
d
7.5
±0.2
φ
3.1
±0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CES
Collector-base voltage
(Emitter open)
2SC3979
2SC3979A
Collector-emitter voltage 2SC3979
(E-B short)
2SC3979A
Collector-emitter voltage (Base open)
V
CEO
V
EBO
I
B
I
C
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power
dissipation
I
CP
P
C
T
j
T
a
=
25°C
Junction temperature
Storage temperature
Parameter
/D
isc
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
on
tin
T
stg
an
Collector-emitter voltage (Base open)
Ma
int
en
Collector-base cut-off current 2SC3979
(Emitter open)
2SC3979A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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.
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
14.0
±0.5
0.8
±0.1
0.5
+0.2
–0.1
Rating
900
Unit
V
2.54
±0.3
5.08
±0.5
1 000
900
V
1 2 3
1 000
800
7
1
3
5
V
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
V
A
A
A
40
W
2.0
150
°C
ue
−55
to
+150
°C
Conditions
Min
800
Typ
Max
Unit
V
µA
ce
I
C
=
10 mA, I
B
=
0
V
CB
=
900 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
50
V
CB
=
1 000 V, I
E
=
0
50
50
µA
V
V
V
CE
=
5 V, I
C
=
0.1 A
V
CE
=
5 V, I
C
=
0.8 A
8
6
I
C
=
0.8 A, I
B
=
0.16 A
I
C
=
0.8 A, I
B
=
0.16 A
V
CE
=
5 V, I
C
=
0.15 A, f
=
1 MHz
I
C
=
0.8 A
I
B1
=
0.16 A, I
B2
= −
0.32 A
V
CC
=
250 V
10
1.5
1.5
MHz
0.7
2.5
0.3
µs
µs
µs
Publication date: February 2003
SJD00122BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3979, 2SC3979A
P
C
T
a
60
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
6
100
T
C
=25˚C
V
CE(sat)
I
C
I
C
/I
B
=5
Collector power dissipation P
C
(W)
50
(1)
40
Collector current I
C
(A)
(1)T
C
=Ta
(2)With a 100×100×2mm
Al heat sink
(3)With a 50×50×2mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
5
10
4
I
B
=900mA
800mA
700mA
600mA
500mA
400mA
300mA
30
3
1
M
ain
Di
sc te
on na
tin nc
ue e/
d
20
2
200mA
0.1
T
C
=100˚C
–25˚C
10
(2)
(3)
(4)
1
100mA
25˚C
0
0
40
80
120
160
Ambient temperature T
a
(°C)
V
BE(sat)
I
C
100
I
C
/I
B
=5
1 000
10
1
T
C
=–25˚C
25˚C
100˚C
ue
0.1
0.01
0.1
1
10
/D
C
ob
V
CB
isc
on
tin
Collector current I
C
(A)
ce
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
1 000
Ma
int
en
I
E
=0
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
100
10
1
1
10
100
Collector-base voltage V
CB
(V)
2
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.
0
0
4
8
12
0.01
0.01
0.1
1
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
C
V
CE
=5V
100
Base-emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
V
CE
=5V
f=1MHz
T
C
=25˚C
100
Transition frequency f
T
(MHz)
10
T
C
=100˚C 25˚C
10
–25˚C
1
1
0.01
0.1
1
10
0.1
0.001
0.01
0.1
1
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
I
C
Safe operation area
100
10
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=–I
B2
)
V
CC
=250V
T
C
=25˚C
100
an
Non repetitive pulse
T
C
=25˚C
10
I
CP
I
C
t=1ms
t
stg
1
1
t=10ms
DC
t
on
t
f
0.1
0.1
0.01
0.01
0
0.4
0.8
1.2
1.6
1
10
100
1000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
SJD00122BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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co fo
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.jp rm
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/en at
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.
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int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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