2SC4208A datasheet, PDF - EEWORLD Datasheet

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2SC4208A: DescriptionSilicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification); CategoryDiscrete semiconductor The transistor; File Size36KB，3 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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2SC4208A Overview

Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

2SC4208A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER BISMUTH COPPER
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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Transistor

2SC4208, 2SC4208A

Silicon NPN epitaxial planer type

For low-frequency output amplification and driver amplification

Complementary to 2SA1619 and 2SA1619A

5.0±0.2

4.0±0.2

Unit: mm

Low collector to emitter saturation voltage V

CE(sat)

Output of 1W is obtained with a complementary pair with

2SA1619 and 2SA1619A.

Allowing supply with the radial taping.

(Ta=25˚C)

Ratings

500

150

–55 ~ +150

Unit

1.27

Absolute Maximum Ratings

Parameter

Collector to

base voltage

Collector to

2SC4208

2SC4208A

2SC4208

CEO

EBO

stg

Symbol

CBO

0.45

–0.1

1.27

+0.15

13.5±0.5

0.7±0.1

0.7±0.2

8.0±0.2

Features

0.45

–0.1

+0.15

emitter voltage 2SC4208A

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

˚C

1 2 3

2.54±0.15

2.3±0.2

1:Emitter

2:Collector

3:Base

TO–92NL Package

Electrical Characteristics

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

2SC4208

2SC4208A

2SC4208

2SC4208A

(Ta=25˚C)

Symbol

CBO

CEO

EBO

FE1*1

FE2

CE(sat)

BE(sat)

Conditions

= 20V, I

= 0

= 10µA, I

= 0

= 10mA, I

= 0

= 10µA, I

= 0

= 10V, I

= 150mA

= 10V, I

= 500mA

= 300mA, I

= 30mA

= 300mA, I

= 30mA

= 10V, I

= –50mA, f = 200MHz

= 10V, I

= 0, f = 1MHz

0.35

1.1

150

min

typ

max

0.1

Unit

µA

340

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

0.6

1.5

MHz

Pulse measurement

FE1

Rank classification

85 ~ 170

120 ~ 240

170 ~ 340

Rank

FE1

2SC4208A Related Products

	2SC4208A	2SC4208
Description	Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)	Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
Is it Rohs certified?	conform to	conform to
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	TIN SILVER BISMUTH COPPER	TIN SILVER BISMUTH COPPER
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz
Base Number Matches	1	1

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