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2SC4208

Description
Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
CategoryDiscrete semiconductor    The transistor   
File Size36KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SC4208 Overview

Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)

2SC4208 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER BISMUTH COPPER
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Transistor
2SC4208, 2SC4208A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1619 and 2SA1619A
5.0±0.2
4.0±0.2
Unit: mm
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Output of 1W is obtained with a complementary pair with
2SA1619 and 2SA1619A.
Allowing supply with the radial taping.
(Ta=25˚C)
Ratings
30
60
25
50
7
1
500
1
150
–55 ~ +150
Unit
V
1.27
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC4208
2SC4208A
2SC4208
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
V
CBO
0.45
–0.1
1.27
+0.15
13.5±0.5
0.7±0.1
0.7±0.2
8.0±0.2
s
Features
0.45
–0.1
+0.15
emitter voltage 2SC4208A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
mA
W
˚C
˚C
1 2 3
2.54±0.15
2.3±0.2
1:Emitter
2:Collector
3:Base
TO–92NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC4208
2SC4208A
2SC4208
2SC4208A
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
B
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
30
60
25
50
7
85
40
0.35
1.1
150
6
*2
min
typ
max
0.1
Unit
µA
V
V
V
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
0.6
1.5
V
V
MHz
15
pF
Pulse measurement
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1

2SC4208 Related Products

2SC4208 2SC4208A
Description Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification) Silicon NPN epitaxial planer type(For low-frequency output amplification and driver amplification)
Is it Rohs certified? conform to conform to
Parts packaging code TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 25 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface TIN SILVER BISMUTH COPPER TIN SILVER BISMUTH COPPER
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz
Base Number Matches 1 1
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