LM52B33-250/B datasheet, PDF - EEWORLD Datasheet

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LM52B33-250/B: DescriptionEEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32; Categorystorage storage; File Size198KB，6 Pages; ManufacturerLSC/CSI; Websitehttps://lsicsi.com

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LM52B33-250/B Overview

EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32

LM52B33-250/B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	QCCN, LCC32,.45X.55
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Is Samacsys	N
Maximum access time	250 ns
Other features	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
command user interface	NO
Data polling	NO
Data retention time - minimum	10
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.05 A
Maximum slew rate	0.12 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	MOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
Base Number Matches	1

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	LM52B33-250/B	DM52B33-250/B	DM52B33H-300/B	LE52B33H-300	LM52B33-300/B	LE52B33H-250	DM52B33H-250/B	LM52B33H-250/B	DM52B33-300/B	LM52B33H-300/B
Description	EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32	EEPROM, 8KX8, 250ns, Parallel, MOS, CDIP28	EEPROM, 8KX8, 300ns, Parallel, MOS, CDIP28	EEPROM, 8KX8, 300ns, Parallel, MOS, CQCC32	EEPROM, 8KX8, 300ns, Parallel, MOS, CQCC32	EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32	EEPROM, 8KX8, 250ns, Parallel, MOS, CDIP28	EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32	EEPROM, 8KX8, 300ns, Parallel, MOS, CDIP28	EEPROM, 8KX8, 300ns, Parallel, MOS, CQCC32
package instruction	QCCN, LCC32,.45X.55	DIP, DIP28,.6	DIP, DIP28,.6	,	QCCN, LCC32,.45X.55	,	DIP, DIP28,.6	QCCN, LCC32,.45X.55	DIP, DIP28,.6	QCCN, LCC32,.45X.55
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	EAR99	3A001.A.2.C	EAR99	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	250 ns	250 ns	300 ns	300 ns	300 ns	250 ns	250 ns	250 ns	300 ns	300 ns
Other features	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS	10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
Data retention time - minimum	10	10	10	10	10	10	10	10	10	10
JESD-30 code	R-CQCC-N32	R-GDIP-T28	R-GDIP-T28	R-CQCC-N32	R-CQCC-N32	R-CQCC-N32	R-GDIP-T28	R-CQCC-N32	R-GDIP-T28	R-CQCC-N32
memory density	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit	65536 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of terminals	32	28	28	32	32	32	28	32	28	32
word count	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words	8192 words
character code	8000	8000	8000	8000	8000	8000	8000	8000	8000	8000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	85 °C	125 °C	85 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-40 °C	-55 °C	-40 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8	8KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, GLASS-SEALED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	NO	NO	YES	YES	YES	NO	YES	NO	YES
technology	MOS	MOS	MOS	MOS	MOS	MOS	MOS	MOS	MOS	MOS
Temperature level	MILITARY	MILITARY	MILITARY	INDUSTRIAL	MILITARY	INDUSTRIAL	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD	NO LEAD	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	NO LEAD
Terminal location	QUAD	DUAL	DUAL	QUAD	QUAD	QUAD	DUAL	QUAD	DUAL	QUAD
Is it Rohs certified?	incompatible	incompatible	incompatible	-	incompatible	-	incompatible	incompatible	incompatible	incompatible
command user interface	NO	NO	NO	-	NO	-	NO	NO	NO	NO
Data polling	NO	NO	NO	-	NO	-	NO	NO	NO	NO
JESD-609 code	e0	e0	e0	-	e0	-	e0	e0	e0	e0
encapsulated code	QCCN	DIP	DIP	-	QCCN	-	DIP	QCCN	DIP	QCCN
Encapsulate equivalent code	LCC32,.45X.55	DIP28,.6	DIP28,.6	-	LCC32,.45X.55	-	DIP28,.6	LCC32,.45X.55	DIP28,.6	LCC32,.45X.55
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Filter level	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	-	38535Q/M;38534H;883B	-	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Maximum standby current	0.05 A	0.05 A	0.05 A	-	0.05 A	-	0.05 A	0.05 A	0.05 A	0.05 A
Maximum slew rate	0.12 mA	0.12 mA	0.12 mA	-	0.12 mA	-	0.12 mA	0.12 mA	0.12 mA	0.12 mA
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal pitch	1.27 mm	2.54 mm	2.54 mm	-	1.27 mm	-	2.54 mm	1.27 mm	2.54 mm	1.27 mm
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
switch bit	NO	NO	NO	-	NO	-	NO	NO	NO	NO
Maker	-	-	LSC/CSI	LSC/CSI	LSC/CSI	LSC/CSI	LSC/CSI	LSC/CSI	LSC/CSI	LSC/CSI

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Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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