EEPROM, 8KX8, 300ns, Parallel, MOS, CDIP28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | LSC/CSI |
| package instruction | DIP, DIP28,.6 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 300 ns |
| Other features | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS |
| command user interface | NO |
| Data polling | NO |
| Data retention time - minimum | 10 |
| JESD-30 code | R-GDIP-T28 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 8192 words |
| character code | 8000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 8KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.6 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.05 A |
| Maximum slew rate | 0.12 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | NO |
| DM52B33-300/B | LM52B33-250/B | DM52B33-250/B | DM52B33H-300/B | LE52B33H-300 | LM52B33-300/B | LE52B33H-250 | DM52B33H-250/B | LM52B33H-250/B | LM52B33H-300/B | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | EEPROM, 8KX8, 300ns, Parallel, MOS, CDIP28 | EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32 | EEPROM, 8KX8, 250ns, Parallel, MOS, CDIP28 | EEPROM, 8KX8, 300ns, Parallel, MOS, CDIP28 | EEPROM, 8KX8, 300ns, Parallel, MOS, CQCC32 | EEPROM, 8KX8, 300ns, Parallel, MOS, CQCC32 | EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32 | EEPROM, 8KX8, 250ns, Parallel, MOS, CDIP28 | EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32 | EEPROM, 8KX8, 300ns, Parallel, MOS, CQCC32 |
| package instruction | DIP, DIP28,.6 | QCCN, LCC32,.45X.55 | DIP, DIP28,.6 | DIP, DIP28,.6 | , | QCCN, LCC32,.45X.55 | , | DIP, DIP28,.6 | QCCN, LCC32,.45X.55 | QCCN, LCC32,.45X.55 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| Maximum access time | 300 ns | 250 ns | 250 ns | 300 ns | 300 ns | 300 ns | 250 ns | 250 ns | 250 ns | 300 ns |
| Other features | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS |
| Data retention time - minimum | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 |
| JESD-30 code | R-GDIP-T28 | R-CQCC-N32 | R-GDIP-T28 | R-GDIP-T28 | R-CQCC-N32 | R-CQCC-N32 | R-CQCC-N32 | R-GDIP-T28 | R-CQCC-N32 | R-CQCC-N32 |
| memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| Memory IC Type | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 32 | 28 | 28 | 32 | 32 | 32 | 28 | 32 | 32 |
| word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
| character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 85 °C | 125 °C | 85 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -40 °C | -55 °C | -40 °C | -55 °C | -55 °C | -55 °C |
| organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Programming voltage | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | YES | NO | NO | YES | YES | YES | NO | YES | YES |
| technology | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | INDUSTRIAL | MILITARY | INDUSTRIAL | MILITARY | MILITARY | MILITARY |
| Terminal form | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD |
| Terminal location | DUAL | QUAD | DUAL | DUAL | QUAD | QUAD | QUAD | DUAL | QUAD | QUAD |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | - | incompatible | - | incompatible | incompatible | incompatible |
| Maker | LSC/CSI | - | - | LSC/CSI | LSC/CSI | LSC/CSI | LSC/CSI | LSC/CSI | LSC/CSI | LSC/CSI |
| command user interface | NO | NO | NO | NO | - | NO | - | NO | NO | NO |
| Data polling | NO | NO | NO | NO | - | NO | - | NO | NO | NO |
| JESD-609 code | e0 | e0 | e0 | e0 | - | e0 | - | e0 | e0 | e0 |
| encapsulated code | DIP | QCCN | DIP | DIP | - | QCCN | - | DIP | QCCN | QCCN |
| Encapsulate equivalent code | DIP28,.6 | LCC32,.45X.55 | DIP28,.6 | DIP28,.6 | - | LCC32,.45X.55 | - | DIP28,.6 | LCC32,.45X.55 | LCC32,.45X.55 |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Filter level | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
| Maximum standby current | 0.05 A | 0.05 A | 0.05 A | 0.05 A | - | 0.05 A | - | 0.05 A | 0.05 A | 0.05 A |
| Maximum slew rate | 0.12 mA | 0.12 mA | 0.12 mA | 0.12 mA | - | 0.12 mA | - | 0.12 mA | 0.12 mA | 0.12 mA |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal pitch | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | - | 1.27 mm | - | 2.54 mm | 1.27 mm | 1.27 mm |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| switch bit | NO | NO | NO | NO | - | NO | - | NO | NO | NO |
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