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MAD1103P

Description
CORE-DRIVER DIODE ARRAY,DIP
CategoryDiscrete semiconductor    diode   
File Size333KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MAD1103P Overview

CORE-DRIVER DIODE ARRAY,DIP

MAD1103P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
Is SamacsysN
Maximum forward voltage (VF)1.1 V
JESD-609 codee0
Number of components16
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum power dissipation0.6 W
Maximum repetitive peak reverse voltage50 V
Maximum reverse current0.5 µA
Maximum reverse recovery time0.008 µs
Reverse test voltage40 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

MAD1103P Related Products

MAD1103P MAD1108P MAD1107P
Description CORE-DRIVER DIODE ARRAY,DIP ARRAY OF INDEPENDENT DIODES,DIP CORE-DRIVER DIODE ARRAY,TO-116
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V
JESD-609 code e0 e0 e0
Number of components 16 8 8
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum power dissipation 0.6 W 0.6 W 0.6 W
Maximum repetitive peak reverse voltage 50 V 50 V 50 V
Maximum reverse current 0.5 µA 0.1 µA 0.5 µA
Maximum reverse recovery time 0.008 µs 0.008 µs 0.008 µs
Reverse test voltage 40 V 40 V 40 V
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker - NXP NXP
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