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BYT30-200

Description
30A, 200V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size44KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

BYT30-200 Overview

30A, 200V, SILICON, RECTIFIER DIODE

BYT30-200 Parametric

Parameter NameAttribute value
package instructionO-MUPM-D1
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresFREE WHEELING DIODE
applicationFAST RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.5 V
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current30 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum power dissipation50 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current35 µA
Maximum reverse recovery time0.1 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1

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