UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
Ultrafast Rectifier
TO-220AC
ITO-220AC
2
BYV29, UG8 Series
PIN 1
PIN 2
2
1
BYV29F, UGF8 Series
PIN 1
1
CASE
PIN 2
TO-263AB
K
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
BYV29B, UGB8 Series
PIN 1
PIN 2
K
HEATSINK
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
8.0 A
300 V, 400 V
110 A
35 ns
1.03 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 minute
SYMBOL
V
RRM
V
RWM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
BYV29-300
UG8FT
300
300
210
300
8.0
110
- 40 to + 150
1500
BYV29-400
UG8GT
400
400
280
400
UNIT
V
V
V
V
A
A
°C
V
Document Number 88557
27-Jun-06
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UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
I
F
= 8 A
Maximum instantaneous forward voltage
(1)
I
F
= 8 A
I
F
= 20 A
Maximum DC reverse current at V
RRM
Maximum reverse recovery time
Maximum reverse recovery time
Maximum reverse recovery current
Maximum recovered stored charged
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
at I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
at I
F
= 1.0 A, di/dt = 100 A/µs, V
R
= 30 V,
I
rr
= 0.1 I
RM
at I
F
= 10 A, di/dt = 50 A/µs, V
R
= 30 V,
T
C
= 100 °C
at I
F
= 2 A, di/dt = 20 A/µs, V
R
= 30 V,
I
rr
= 0.1 I
RM
SYMBOL
BYV29-300
UG8FT
BYV29-400
UG8GT
UNIT
V
F
1.25
1.03
1.40
10
350
35
50
5.5
55
V
I
R
t
rr
t
rr
I
RM
Q
rr
µA
ns
ns
A
nC
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case
SYMBOL
R
θJC
BYV29
UG8
2.5
BYV29F
UGF8
5.5
BYV29B
UGB8
2.5
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
BYV29-400-E3/45
BYV29F-400-E3/45
BYV29B-400-E3/45
BYV29B-400-E3/81
UNIT WEIGHT (g)
1.80
1.95
1.77
1.77
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/Tube
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tube
Tape Reel
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Document Number 88557
27-Jun-06
UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
12
1000
Resistive or Inductive Load
10
Instantaneous Reverse Leakage
Current (µA)
T
j
= 125 °C
100
T
j
= 100 °C
8
6
10
1
T
j
= 25 °C
0.1
4
2
0
0
25
50
75
100
125
150
175
0.01
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Maximum Forward Current Derating Curve
Figure 4. Typical Reverse Leakage Charateristics
Stored Charge/Reverse Recovery Time
(nC/ns)
150
160
140
120
di/dt = 50 A/µs
100
80
60
40
20
di/dt = 20 A/µs
0
25
50
75
100
125
di/dt = 150 A/µs
di/dt = 100 A/µs
di/dt = 100 A/µs
di/dt = 20 A/µs
Peak Forward Surge Current (A)
125
T
C
= 100 °C
8.3
ms Single Half Sine-Wave
t
rr
Q
rr
di/dt = 150 A/µs
100
75
50
25
0
1
10
100
Number
of Cycles at 60 Hz
Junction Temperature ( °C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 5. Reverse Switching Characteristics Per Leg
100
100
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1
T
j
= 100 °C
Junction Capacitance (pF)
T
j
= 125 °C
10
T
j
= 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Charateristics
Figure 6. Typical Junction Capacitance
Document Number 88557
27-Jun-06
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UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54)MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
PIN 1
PIN 2
CASE
ITO-220AC
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.404
0.384
0.076
(1.93)
45° Ref.
(10.26)
(9.75)
Ref.
ref.
See note
See note
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
7° Ref.
0.076 Ref.
(1.93) Ref. 0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
7° Ref.
0.651 (16.54)
0.350 (8.89)
0.330 (8.38)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.600 (15.24)
0.580 (14.73)
PIN
2
1
Copper exposure
0.010 (0.25) Max.
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
7° Ref.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027(0.68)
0.205(5.20)
0.195(4.95)
0.022(0.56)
0.014(0.36)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Note:
Copper exposure is allowable for 0.005 (0.13) Max. from the
body
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88557
27-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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