DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE,NP32N055ILE,NP32N055SLE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP32N055HLE
NP32N055ILE
Note
PACKAGE
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
TO-252 (JEDEC) / MP-3ZK
FEATURES
•
Channel temperature 175 degree rating
•
Super low on-state resistance
R
DS(on)1
= 24 mΩ MAX. (V
GS
= 10 V, I
D
= 16 A)
R
DS(on)2
= 29 mΩ MAX. (V
GS
= 5.0 V, I
D
= 16 A)
•
Low C
iss
: C
iss
= 1300 pF TYP.
•
Built-in gate protection diode
NP32N055SLE
Note
Not for new design.
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
55
±20
±32
±100
1.2
66
175
−55
to +175
28 / 21 / 8
7.8 / 44 / 64
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= 20
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
2.27
125
°C/W
°C/W
Channel to Ambient Thermal Resistance R
th(ch-A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14137EJ5V0DS00 (5th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1999, 2005
NP32N055HLE,NP32N055ILE,NP32N055SLE
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
SYMBOL
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
TEST CONDITIONS
V
DS
= 55 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µ
A
V
DS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A
V
GS
= 5.0 V, I
D
= 16 A
V
GS
= 4.5 V, I
D
= 16 A
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 28 V, I
D
= 16 A
V
GS
= 10 V
R
G
= 1
Ω
MIN.
TYP.
MAX.
10
±10
UNIT
µ
A
µ
A
V
S
1.5
8
2
16
19
22
24
1300
180
90
14
8
40
7.4
2.5
Drain to Source On-state Resistance
24
29
33
2000
270
160
31
20
81
19
41
23
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G1
Q
G2
V
DD
= 44 V, V
GS
= 10 V, I
D
= 32 A
V
DD
= 44 V
V
GS
= 5.0 V
I
D
= 32 A
I
F
= 32 A, V
GS
= 0 V
I
F
= 32 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
27
15
5
9
1.0
41
58
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
R
L
V
DD
V
GS
V
GS
Wave Form
0
10%
V
GS
90%
V
DS
90%
90%
10%
10%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet D14137EJ5V0DS
NP32N055HLE,NP32N055ILE,NP32N055SLE
TYPICAL CHARACTERISTICS (T
A
= 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
70
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
60
50
40
30
20
10
0
0
25
50
75
100 125 150 175 200
0
25
50
75
100 125 150 175 200
T
C
- Case Temperature - ˚C
T
C
- Case Temperature -
˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
Single Pulse Avalanche Energy - mJ
70
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
64 mJ
I
D
- Drain Current - A
100
d
ite )
im 0 V
)
L 1
on
=
S(
S
R
D
t V
G
a
(
I
D(pulse)
I
D(DC)
1m
PW
60
50
44 mJ
10
s
0
µ
=1
0
µ
s
10
DC
P
Limowe
ite r D
d iss
ip
s
40
30
20
10
7.8 mJ
0
25
50
75
at
ion
I
AS
= 8 A
21 A
28 A
1
T
C
= 25˚C
Single Pulse
1
10
100
0.1
0.1
100
125
150
175
V
DS -
Drain to Source Voltage - V
Starting T
ch
- Starting Channel Temperature -
˚C
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
˚C/W
100
R
th(ch-A)
= 125
˚C/W
10
R
th(ch-C)
= 2.27
˚C/W
1
0.1
Single Pulse
T
C
= 25˚C
100
µ
1m
10 m
100 m
1
10
100
1000
0.01
10
µ
PW - Pulse Width - s
Data Sheet D14137EJ5V0DS
3
NP32N055HLE,NP32N055ILE,NP32N055SLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
120
100
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
V
GS
=10 V
I
D
- Drain Current - A
10
1
T
A
=
−55˚C
25˚C
75˚C
150˚C
175˚C
I
D
- Drain Current - A
80
60
40
20
4.5 V
5.0 V
0.1
0.01
1.0
2.0
3.0
4.0
V
DS
= 10 V
5.0
6.0
0
0
1
2
3
4
5
6
7
8
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
100
Pulsed
V
DS
= 10 V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
Pulsed
10
30
1
T
A
= 175˚C
75˚C
25˚C
−55˚C
20
I
D
= 16 A
0.1
10
0.01
0.01
0.1
1
10
100
0
0
2
4
6
8
10 12
14
16 18
20
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
80
70
60
50
40
30
20
10
0
0.1
1
10
V
GS
= 10 V
5.0 V
4.5 V
Pulsed
V
GS(th)
- Gate to Source Threshold Voltage - V
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
V
DS
= V
GS
I
D
= 250
µ
A
2.0
1.0
100
0
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature -
˚C
4
Data Sheet D14137EJ5V0DS
NP32N055HLE,NP32N055ILE,NP32N055SLE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
40
30
20
10
0
I
D
= 16 A
−50
0
50
100
150
T
ch
- Channel Temperature -
˚C
V
GS
= 4.5 V
5.0 V
10 V
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
I
SD
- Diode Forward Current - A
100
V
GS
= 10 V
10
V
GS
= 0 V
1
0.1
0
0.5
1.0
1.5
V
SD
- Source to Drain Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
V
GS
= 0 V
f = 1 MHz
Figure15. SWITCHING CHARACTERISTICS
1000
100
t
f
t
d(off)
t
d(on)
C
oss
100
C
rss
10
t
r
10
0.1
1
10
100
1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
14
60
V
DD
= 44 V
28 V
11 V
V
GS
12
10
8
6
20
V
DS
0
I
D
= 32 A
0
4
8
12
16
20
24
28
32
4
2
V
DS
- Drain to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
100
40
10
1
0.1
1.0
10
100
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
di/dt = 100 A/µs
V
GS
= 0 V
Data Sheet D14137EJ5V0DS
5
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