NP32N055ILE-AZ datasheet, PDF - EEWORLD Datasheet

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NP32N055ILE-AZ: DescriptionPower Field-Effect Transistor, 32A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size173KB，7 Pages; ManufacturerNEC Electronics

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NP32N055ILE-AZ Overview

Power Field-Effect Transistor, 32A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN

NP32N055ILE-AZ Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	64 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	32 A
Maximum drain-source on-resistance	0.033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP32N055HLE,NP32N055ILE,NP32N055SLE

SWITCHING

N-CHANNEL POWER MOSFET

DESCRIPTION

These products are N-channel MOS Field Effect

Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

NP32N055HLE

NP32N055ILE

Note

PACKAGE

TO-251 (JEITA) / MP-3

TO-252 (JEITA) / MP-3Z

TO-252 (JEDEC) / MP-3ZK

FEATURES

•

Channel temperature 175 degree rating

•

Super low on-state resistance

DS(on)1

= 24 mΩ MAX. (V

= 10 V, I

= 16 A)

DS(on)2

= 29 mΩ MAX. (V

= 5.0 V, I

= 16 A)

•

Low C

iss

: C

iss

= 1300 pF TYP.

•

Built-in gate protection diode

NP32N055SLE

Note

Not for new design.

(TO-251)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC)

Drain Current (pulse)

Note1

DSS

GSS

D(DC)

D(pulse)

stg

±20

±32

±100

1.2

175

−55

to +175

28 / 21 / 8

7.8 / 44 / 64

°C

(TO-252)

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Note2

Notes 1.

≤

s, Duty Cycle

≤

Starting T

= 25°C, R

= 25

Ω,

= 20

→

0 V (See Figure 4.)

THERMAL RESISTANCE

Channel to Case Thermal Resistance

th(ch-C)

2.27

125

°C/W

Channel to Ambient Thermal Resistance R

th(ch-A)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14137EJ5V0DS00 (5th edition)

Date Published July 2005 NS CP(K)

Printed in Japan

The mark

shows major revised points.

1999, 2005

NP32N055ILE-AZ Related Products

	NP32N055ILE-AZ	NP32N055HLE-AZ
Description	Power Field-Effect Transistor, 32A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, MP-3Z, 3 PIN	Power Field-Effect Transistor, 32A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, MP-3, 3 PIN
Parts packaging code	TO-252	TO-251
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	4	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	64 mJ	64 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V
Maximum drain current (ID)	32 A	32 A
Maximum drain-source on-resistance	0.033 Ω	0.033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252	TO-251
JESD-30 code	R-PSSO-G2	R-PSIP-T3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	100 A	100 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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