RN1441(TE85R2) datasheet, PDF - EEWORLD Datasheet

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RN1441(TE85R2): DescriptionTRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size697KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN1441(TE85R2) Overview

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

RN1441(TE85R2) Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	200
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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RN1441∼RN1444

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1441,RN1442,RN1443,RN1444

Muting and Switching Applications

High emitter-base voltage: V

EBO

= 25V (min)

High reverse h

: reverse h

= 150 (typ.) (V

−2V,

−4mA)

Low on resistance: R

= 1Ω (typ.) (I

= 5mA)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Unit in mm

Equivalent Circuit

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

300

200

150

−55~150

Unit

°C

Type No.

RN1441

RN1442

RN1443

RN1444

Marking

classification

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

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