RFH25N20 datasheet, PDF - EEWORLD Datasheet

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RFH25N20: Description25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC; CategoryDiscrete semiconductor The transistor; File Size208KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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RFH25N20 Overview

25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC

RFH25N20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	25 A
Maximum drain current (ID)	25 A
Maximum drain-source on-resistance	1.875 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	400 pF
JEDEC-95 code	TO-218AC
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	150 W
Maximum power dissipation(Abs)	150 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Maximum opening time (tons)	305 ns
Base Number Matches	1

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RFH25N20 Related Products

	RFH25N20	RFH25N18
Description	25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC	25A, 180V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Is Samacsys	N	N
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	180 V
Maximum drain current (Abs) (ID)	25 A	25 A
Maximum drain current (ID)	25 A	25 A
Maximum drain-source on-resistance	1.875 Ω	1.875 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	400 pF	400 pF
JEDEC-95 code	TO-218AC	TO-218AC
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	150 W	150 W
Maximum power dissipation(Abs)	150 W	150 W
Maximum pulsed drain current (IDM)	60 A	60 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	600 ns	600 ns
Maximum opening time (tons)	305 ns	305 ns
Base Number Matches	1	1

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