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RFH25N18

Description
25A, 180V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
CategoryDiscrete semiconductor    The transistor   
File Size208KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

RFH25N18 Overview

25A, 180V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC

RFH25N18 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codenot_compliant
ECCN codeEAR99
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage180 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance1.875 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)400 pF
JEDEC-95 codeTO-218AC
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)600 ns
Maximum opening time (tons)305 ns
Base Number Matches1

RFH25N18 Related Products

RFH25N18 RFH25N20
Description 25A, 180V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC 25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC
Is it Rohs certified? incompatible incompatible
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 180 V 200 V
Maximum drain current (Abs) (ID) 25 A 25 A
Maximum drain current (ID) 25 A 25 A
Maximum drain-source on-resistance 1.875 Ω 1.875 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 400 pF 400 pF
JEDEC-95 code TO-218AC TO-218AC
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 150 W 150 W
Maximum power dissipation(Abs) 150 W 150 W
Maximum pulsed drain current (IDM) 60 A 60 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 600 ns 600 ns
Maximum opening time (tons) 305 ns 305 ns
Base Number Matches 1 1
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