EEWORLDEEWORLDEEWORLD

Part Number

Search

DB3J316N

Description
Mixer Diode, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size496KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
Download Datasheet Parametric View All

DB3J316N Overview

Mixer Diode, HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN

DB3J316N Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-F3
Contacts3
Manufacturer packaging codeSMINI3-F2-B
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.55 V
JESD-30 codeR-PDSO-F3
Maximum non-repetitive peak forward current1 A
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
DB3J316N
Silicon epitaxial planar type
For small current rectification
DB3X316N in SMini3 type package
Features
Short reverse recovery time t
rr
Low forward voltage V
F
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini3-F2-B
Name
Pin
1: Anode-1
2: Anode-2
Basic Part Number
Dual DB2S316 (Common cathode)
3: Cathode-1
Cathode-2
Marking Symbol: 5J
Internal Connection
3
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Single
Double
Single
Double
Symbol
V
R
V
RRM
I
F(AV)
I
FM
I
FSM
T
j
T
stg
Rating
30
30
100
70
300
200
1
125
–55 to +125
Unit
V
V
mA
mA
A
°C
°C
1
2
Non-repetitive peak forward surge current
*
Junction temperature
Storage temperature
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
I
R
C
t
t
rr
I
F
= 100 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=100 mA, I
rr
= 10 mA,
R
L
= 100
Ω 
2
0.8
Conditions
Min
Typ
Max
0.55
15
Unit
V
mA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. BED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: November 2010
1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1435  937  450  1919  636  29  19  10  39  13 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号