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HDBL103GC1G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size375KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

HDBL103GC1G Overview

Bridge Rectifier Diode,

HDBL103GC1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDIP-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
HDBL101G thru HDBL107G
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated High Efficient Bridge Rectifiers
DBL
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Notes 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25
T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
Trr
R
θjL
R
θjA
T
J
T
STG
50
15
40
- 55 to + 150
- 55 to + 150
1.0
HDBL
101G
50
35
50
HDBL
102G
100
70
100
HDBL
103G
200
140
200
HDBL
104G
400
280
400
1
50
10.3
1.3
5
500
75
O
HDBL
105G
600
420
600
HDBL
106G
800
560
800
HDBL
107G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
1.7
V
μA
ns
C/W
O
O
C
C
Document Number: DS_D1311010
Version: E13

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