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SRM4HFSMSS

Description
Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size141KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SRM4HFSMSS Overview

Rectifier Diode, 1 Phase, 1 Element, 20A, 400V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN

SRM4HFSMSS Parametric

Parameter NameAttribute value
package instructionE-LELF-R2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
applicationHYPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LELF-R2
Maximum non-repetitive peak forward current475 A
Number of components1
Phase1
Number of terminals2
Maximum output current20 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time0.04 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
PRELIMINARY
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SRM3HF thru SRM4HF
Series
20 AMP
300-400 Volts
40 nsec
Hyper Fast Rectifier
Features:
Replaces DO-4 and DO-5 (1N5816,1N6306)
High Current/ Voltage Version of 1N5811
Hyper Fast Recovery
PIV to 400 Volts
Low Reverse Leakage Current
Hermetically Sealed Void-Free Construction
3/
Monolithic Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Surface Mount Versions
Equivalent to 1N6688-1N6689
TX, TXV, and Space Level Screening Available
Designer’s Data Sheet
Part Number / Ordering Information
1/
SRM__ HF __ __
Screening
2/
__
= Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
__
= Axial
SMS = Surface Mount Square Tab
BTR = Button
Voltage
3 = 300 V
4 = 400 V
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60Hz Sine Wave, TA=25◦C)
Symbol
SRM3HF
SRM4HF
V
RRM
V
RWM
V
R
I
O
I
FSM
T
op
& T
stg
Axial ( )
Square Tab (SMS)
Button (BTR)
Value
300
400
20
475
-65 to +175
3.0
2.5
1.0
Units
Volts
Amps
Amps
o
Peak Surge Current
(8.3 ms Pulse, Half sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between
Pulses, T
A
=25
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
(Axial – Junction to Lead, L=3/8”)
(SMS – Junction to End Tab)
(Button – Junction to Case)
C
R
θJL
R
θJE
R
θJC
o
C/W
Notes:
1/
For ordering information, price, operating curves, and availability, contact factory.
2/
Modified MIL-PRF-19500 Screening Flow – Consult Factory.
3/
PIND testing not required on void free devices per MIL-PRF-19500.
Axial
SMS
Button
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0165F
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